Radiative recombination in narrow gap HgTe/CdHgTe quantum well heterostructures for laser applications V. Ya. Aleshkin, A. A. Dubinov, V. V. Rumyantsev [et al.]
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ArticleSubject(s): квантовые ямы | длинноволновые лазеры | излучательная рекомбинация | узкозонные гетероструктурыGenre/Form: статьи в журналах Online resources: Click here to access online
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Journal of physics: Condensed matter Vol. 30, № 49. P. 495301 (1-6)Abstract: Radiative recombination is studied in CdHgTe/HgTe QWs with bandgap in the 40-140 meV range using four-band Kane model. Calculated radiative lifetimes agree well with the photoconductivity kinetics measurements. We show that the side maxima in the valence band hinder the radiative recombination at high carrier concentrations and discuss how to overcome this effect for the development of long-wavelength lasers.
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Radiative recombination is studied in CdHgTe/HgTe QWs with bandgap in the 40-140 meV range using four-band Kane model. Calculated radiative lifetimes agree well with the photoconductivity kinetics measurements. We show that the side maxima in the valence band hinder the radiative recombination at high carrier concentrations and discuss how to overcome this effect for the development of long-wavelength lasers.
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