Conduction mechanism of metal-TiO2-Si structures V. M. Kalygina, I. M. Egorova, I. A. Prudaev, O. P. Tolbanov
Material type:
ArticleSubject(s): пленки оксида титана | температура отжига | генерация носителей заряда | токи ограниченные пространственным зарядомGenre/Form: статьи в сборниках Online resources: Click here to access online
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International Siberian Conference on Control and Communications (SIBCON–2015), Russia, Omsk, may 21-23, 2015 : proceedings P. [1-5]Abstract: The influence of annealing of titanium oxide films on the currents of metal-TiO2-n-Si structures was investigated. It has been shown that regardless of the annealing temperature the conductivity of structures at positive potentials on the gate is determined by currents limited by the space charge in the dielectric with traps exponentially distributed on energy. At negative potentials the main contribution to the current is the thermal generation of charge carriers in the space charge region in the silicon. Interface properties of TiO2-n-Si depend on the structural and phase state of the titanium oxide film which are determined by the annealing temperature.
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The influence of annealing of titanium oxide films on the currents of metal-TiO2-n-Si structures was investigated. It has been shown that regardless of the annealing temperature the conductivity of structures at positive potentials on the gate is determined by currents limited by the space charge in the dielectric with traps exponentially distributed on energy. At negative potentials the main contribution to the current is the thermal generation of charge carriers in the space charge region in the silicon. Interface properties of TiO2-n-Si depend on the structural and phase state of the titanium oxide film which are determined by the annealing temperature.
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