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Revealing distortion of carbon nanotube walls via angle-resolved Xray spectroscopy M. A. Kanygin, A. V. Okotrub, L. G. Bulusheva [et.al.]

Contributor(s): Kanygin, Mikhail A | Bulusheva, L. G | Vilkov, Oleg Yu | Hata, K | Okotrub, Alexander V | Томский государственный университет Радиофизический факультет Кафедра радиоэлектроники | Томский государственный университет Научное управление Лаборатории НУMaterial type: ArticleArticleSubject(s): углеродные нанотрубки | спектроскопияGenre/Form: статьи в журналах Online resources: Click here to access online In: Current applied physics Vol. 15, № 10. P. 1111-1116Abstract: Arrays of aligned single-walled carbon nanotubes (SWCNTs) produced by supergrowth method were studied by scanning electron microscopy (SEM) and angle-resolved near-edge X-ray absorption fine structure spectroscopy, which defined that nanotube disorder is 10e13 and 23e27, respectively. The latter value was confirmed by X-ray fluorescent spectroscopy. The difference in the obtained angular deviations was attributed to distortion of the SWCNT walls, because the X-ray spectroscopy methods are sensitive to a local environment of probing atoms, while the SEM examines the nanotubes at a substantially larger length scale. Significant distortion (20e24) of SWCNT walls could be related to the defects introduced during the growth process.
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Библиогр.: 44 назв.

Arrays of aligned single-walled carbon nanotubes (SWCNTs) produced by supergrowth method were studied by scanning electron microscopy (SEM) and angle-resolved near-edge X-ray absorption fine structure spectroscopy, which defined that nanotube disorder is 10e13 and 23e27, respectively. The latter value was confirmed by X-ray fluorescent spectroscopy. The difference in the obtained angular deviations was attributed to distortion of the SWCNT walls, because the X-ray spectroscopy methods are sensitive to a local environment of probing atoms, while the SEM examines the nanotubes at a substantially larger length scale. Significant distortion (20e24) of SWCNT walls could be related to the defects introduced during the growth process.

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