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Generation of terahertz radiation in LED heterostructures with multiple InGaN/GaN quantum wells at two-photon excitation by femtosecond I. A. Prudaev, S. Y. Sarkisov, O. P. Tolbanov, А. V. Kosobutsky

Contributor(s): Prudaev, Ilya A | Tolbanov, Oleg P | Kosobutsky, Alexey V | Sarkisov, Sergey Yu | Томский государственный университет Радиофизический факультет Научные подразделения РФФMaterial type: ArticleArticleSubject(s): спектроскопия | терагерцовое излучение | нитрид индия-галлия | нитрид галлия | квантовые точкиGenre/Form: статьи в журналах Online resources: Click here to access online In: Russian physics journal Vol. 58, № 2. P. 192-197Abstract: The results of experiments on the generation of terahertz radiation in the nitride LED structures at optical excitation by ultrashort laser pulses are presented. The dependences of the emission spectra on the structural parameters of samples and intensity of laser pulses are studied. An increase in the amplitude and the shift of the frequency spectra of terahertz pulses to higher frequencies with increasing number of quantum wells in the heterostructure is found.
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The results of experiments on the generation of terahertz radiation in the nitride LED structures at optical excitation by ultrashort laser pulses are presented. The dependences of the emission spectra on the structural parameters of samples and intensity of laser pulses are studied. An increase in the amplitude and the shift of the frequency spectra of terahertz pulses to higher frequencies with increasing number of quantum wells in the heterostructure is found.

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