Effect of Si+ ion implantation in α-Ga2O3 films on their gas sensitivity N. N. Yakovlev, A. V. Almaev, P. N. Butenko [et al.]
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ArticleContent type: Текст Media type: электронный Subject(s): газовая чувствительность | газофазная эпитаксия | галогениды | ионная имплантацияGenre/Form: статьи в журналах Online resources: Click here to access online
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IEEE sensors journal Vol. 23, № 3. P. 1885-1895Abstract: The effect of the Si+ ion implantation on the gas-sensing properties of single-crystal (0001) α-Ga2O3 films grown by halide vapor phase epitaxy (HVPE) has been studied. It is established that irradiation with a dose of 8 × 1012– 8 × 1015 cm−2 at an energy of 100 keV followed by postimplantation annealing increases the response of α-Ga2O3 films to 3 vol% of H2 by 43 times at 400 ◦C, reduces the response time by a factor of 6, and expands the operating temperature range down to 30 ◦C. In addition, α-Ga2O3 layers irradiated with a Si+ ion dose of 8 × 1013–8 × 1015 cm−2 demonstrate high sensitivity to CO and NH3 gases. The mechanism of Si+ ion irradiationeffect on the gas-sensingproperties of α-Ga2O3 structures is proposed.
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The effect of the Si+ ion implantation on the gas-sensing properties of single-crystal (0001) α-Ga2O3 films grown by halide vapor phase epitaxy (HVPE) has been studied. It is established that irradiation with a dose of 8 × 1012– 8 × 1015 cm−2 at an energy of 100 keV followed by postimplantation annealing increases the response of α-Ga2O3 films to 3 vol% of H2 by 43 times at 400 ◦C, reduces the response time by a factor of 6, and expands the operating temperature range down to 30 ◦C. In addition, α-Ga2O3 layers irradiated with a Si+ ion dose of 8 × 1013–8 × 1015 cm−2 demonstrate high sensitivity to CO and NH3 gases. The mechanism of Si+ ion irradiationeffect on the gas-sensingproperties of α-Ga2O3 structures is proposed.
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