Influence of postgrowth processing technology on the laser induced damage threshold of ZnGeP2 single crystal N. N. Yudin, O. L. Antipov, A. I. Gribenyukov [et al.]
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ArticleContent type: Текст Media type: электронный Subject(s): порог лазерного разрушения | нелинейная оптика | нелинейные кристаллы дифосфида цинка-герма нияGenre/Form: статьи в журналах Online resources: Click here to access online
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Russian physics journal Vol. 64, № 11. P. 2096-2101Abstract: The laser induced damage thresholds of ZnGeP2 single crystals are determined. The values of the thresholds under the action of laser radiation at a wavelength of 2,097 μm, pulse repetition frequency of 10 kHz, and pulse duration of 35 ns are W0d =1.8 J/cm2 and W0d =2.1 J/cm2 for crystals manufactured by LOK LLC, Russia and the Harbin Institute of Technology, China, respectively. The effect of post-growth processing of ZnGeP2 single crystals (polishing of working surfaces, deposition of antireflection interference coatings) on the laser induced damage thresholds of the surfaces of these crystals has been studied. It was established that the presence of silicon conglomerates in an interference antireflection coating leads to a decrease in the laser induced damage threshold.
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The laser induced damage thresholds of ZnGeP2 single crystals are determined. The values of the thresholds under the action of laser radiation at a wavelength of 2,097 μm, pulse repetition frequency of 10 kHz, and pulse duration of 35 ns are W0d =1.8 J/cm2 and W0d =2.1 J/cm2 for crystals manufactured by LOK LLC, Russia and the Harbin Institute of Technology, China, respectively. The effect of post-growth processing of ZnGeP2 single crystals (polishing of working surfaces, deposition of antireflection interference coatings) on the laser induced damage thresholds of the surfaces of these crystals has been studied. It was established that the presence of silicon conglomerates in an interference antireflection coating leads to a decrease in the laser induced damage threshold.
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