Interstitial H2 in 29Si E. V. Lavrov, V. V. Melnikov, N. V. Abrosimov
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ArticleContent type: Текст Media type: электронный Subject(s): орто-пара-превращение | водород | кремний | метод комбинационного рассеяния светаGenre/Form: статьи в журналах Online resources: Click here to access online
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Physical Review B Vol. 103, № 20. P. 205204-1-205204-5Abstract: The ortho-para conversion of interstitial H2 in single-crystalline natural Si (natSi) and 29Si (enrichment 96.2%) is studied by Raman scattering. The conversion process was found to be practically independent of the isotope composition of Si. The characteristic ortho-to-para conversion time at 77 K was found to be 220 ± 35 and 200 ± 35 h for 29Si and natSi, respectively, whereas at room temperature the back conversion occurs with a characteristic time of 8.8 ± 1.5 and 10.5 ± 1.5 h for 29Si and natSi, respectively. These values agree very well with the transition rates found in previous IR absorption studies by Peng et al. for natSi [Phys. Rev. B 80, 125207 (2009)]. Our findings imply that an interaction of H2 with the nuclear spin of nearby 29Si has marginal, if any, effects on the ortho-para conversion rate of molecular hydrogen in silicon.
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The ortho-para conversion of interstitial H2 in single-crystalline natural Si (natSi) and 29Si (enrichment 96.2%) is studied by Raman scattering. The conversion process was found to be practically independent of the isotope composition of Si. The characteristic ortho-to-para conversion time at 77 K was found to be 220 ± 35 and 200 ± 35 h for 29Si and natSi, respectively, whereas at room temperature the back conversion occurs with a characteristic time of 8.8 ± 1.5 and 10.5 ± 1.5 h for 29Si and natSi, respectively. These values agree very well with the transition rates found in previous IR absorption studies by Peng et al. for natSi [Phys. Rev. B 80, 125207 (2009)]. Our findings imply that an interaction of H2 with the nuclear spin of nearby 29Si has marginal, if any, effects on the ortho-para conversion rate of molecular hydrogen in silicon.
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