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Interface studies in HgTe/HgCdTe quantum wells N. N. Mikhailov, V. Shvets, D. Ikusov [et al.]
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ArticleContent type: Текст Media type: электронный Subject(s): квантовые ямы | границы раздела | просвечивающая электронная микроскопияGenre/Form: статьи в журналах Online resources: Click here to access online
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Physica status solidi B Vol. 257, № 5. P. 1900598 (1-5)Abstract: Transmission electron microscopy (TEM) is used for the study of interfaces in two HgTe/HgCdTe single quantum-well (QW) structures grown by molecular beam epitaxy on GaAs substrates. The studies are conducted in bright-field and scanning/high-angle annular dark field modes. The effect of the growth mode on the sharpness of interfaces in the QWs is investigated. Effective in situ ellipsometric control over chemical composition and thickness of the layers constituting the QW structures is demonstrated.
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Transmission electron microscopy (TEM) is used for the study of interfaces in two HgTe/HgCdTe single quantum-well (QW) structures grown by molecular beam epitaxy on GaAs substrates. The studies are conducted in bright-field and scanning/high-angle annular dark field modes. The effect of the growth mode on the sharpness of interfaces in the QWs is investigated. Effective in situ ellipsometric control over chemical composition and thickness of the layers constituting the QW structures is demonstrated.
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