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Characterisation of the HEXITEC4S X-ray spectroscopic imaging detector incorporating through-silicon via (TSV) technology M. C. Veale, P. Booker, I. Church [et al.] by Veale, Matthew C | Booker, P | Church, I | Jones, L. L | Lipp, J | Schneider, Andreas | Seller, Paul H | Wilson, Matthew D | Chsherbakov, Ivan | Kolesnikova, Irina I | Lozinskaya, Anastassiya D | Novikov, Vladimir A | Tolbanov, Oleg P | Tyazhev, Anton V | Zarubin, Andrei N. Source: Nuclear instruments and methods in physics research. Section A : accelerators, spectrometers, detectors and associated equipmentMaterial type: Article; Format:
electronic
available online
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Optical pump–terahertz probe study of HR GaAs:Cr and SI GaAs:El2 structures with long charge carrier lifetimes I. A. Kolesnikova, D. A. Kobtsev, R. A. Redkin [et al.] by Kolesnikova, Irina I | Kobtsev, Daniil A | Redkin, Ruslan A | Voevodin, Vladimir I | Tyazhev, Anton V | Tolbanov, Oleg P | Sarkisov, Yuri S | Sarkisov, Sergey Yu | Atuchin, Victor V. Source: PhotonicsMaterial type: Article; Format:
electronic
available online
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Influence of temperature on the energy resolution of sensors based on HR GaAs:Cr A. D. Lozinskaya, M. C. Veale, I. I. Kolesnikova [et al.] by Lozinskaya, Anastassiya D | Veale, Matthew C | Kolesnikova, Irina I | Novikov, Vladimir A | Tolbanov, Oleg P | Tyazhev, Anton V | Wheater, R. M | Zarubin, Andrei N. Source: Journal of instrumentation : electronic journalMaterial type: Article; Format:
electronic
available online
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The influence of contact material and its fabrication on X-ray HR-GaAs:Cr sensor noise characteristics I. Chsherbakov, P. Chsherbakov, I. Kolesnikova [et al.] by Chsherbakov, P | Kolesnikova, Irina I | Lozinskaya, Anastassiya D | Mihaylov, Timofei | Novikov, Vladimir A | Tolbanov, Oleg P | Tyazhev, Anton V | Zarubin, Andrei N | Chsherbakov, Ivan. Source: Journal of instrumentation : electronic journalMaterial type: Article; Format:
electronic
available online
Online access: Click here to access online Availability: No items available :
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Characterization of 4 inch GaAs:Cr wafers D. Budnitsky, V. Novikov, A. Lozinskaya [et.al.] by Budnitsky, D. L | Lozinskaya, Anastassiya D | Kolesnikova, Irina I | Zarubin, Andrei N | Shemeryankina, A | Mikhailov, T | Skakunov, M. S | Tolbanov, Oleg P | Tyazhev, Anton V | Novikov, Vladimir A. Source: Journal of instrumentation : electronic journalMaterial type: Article; Format:
electronic
available online
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The visibility and stability of GaSe nanoflakes of about 50 layers on SiO2/Si wafers R. A. Redkin, D. A. Kobtsev, I. I. Kolesnikova [et al.] by Redkin, Ruslan A | Kobtsev, Daniil A | Kolesnikova, Irina I | Bereznaya, Svetlana A | Sarkisov, Yuri S | Voevodin, Vladimir I | Novikov, Vadim A | Mihaylov, Timofei | Sarkisov, Sergey Yu. Source: International journal of modern physics BMaterial type: Article; Format:
electronic
available online
Online access: Click here to access online Availability: No items available :
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GaAs:Cr X-ray sensors noise characteristics investigation by means of amplitude spectrum analysis I. Chsherbakov, I. Kolesnikova, A. D. Lozinskaya [et.al.] by Chsherbakov, Ivan | Lozinskaya, Anastassiya D | Mihaylov, Timofei | Novikov, Vadim A | Shemeryankina, A | Tolbanov, Oleg P | Tyazhev, Anton V | Zarubin, Andrei N | Kolesnikova, Irina I. Source: Journal of instrumentation : electronic journalMaterial type: Article; Format:
electronic
available online
Online access: Click here to access online Availability: No items available :
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Electron mobility-lifetime and resistivity mapping of GaAs:Cr wafers I. Chsherbakov, I. Kolesnikova, A. Lozinskaya [et.al.] by Chsherbakov, Ivan | Lozinskaya, Anastassiya D | Mihaylov, Timofei | Novikov, Vladimir A | Shemeryankina, A | Tolbanov, Oleg P | Tyazhev, Anton V | Zarubin, Andrei N | Kolesnikova, Irina I. Source: Journal of instrumentation : electronic journalMaterial type: Article; Format:
electronic
available online
Online access: Click here to access online Availability: No items available :
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