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Synthesis of epitaxial films based on Ge-Si-Sn materials with Ge/GeSn, Ge/GeSiSn, and GeSn/GeSiSn heterojunctions V. A. Timofeev, A. P. Kokhanenko, A. I. Nikiforov [et.al.] by Timofeev, V. A | Nikiforov, Alexander I | Mashanov, Vladimir I | Tuktamyshev, Artur R | Loshkarev, Ivan D | Kokhanenko, Andrey P | Томский государственный университет Сибирский физико-технический институт Научные подразделения СФТИ | Томский государственный университет Радиофизический факультет Кафедра квантовой электроники и фотоники. Source: Russian physics journalMaterial type: Article; Format:
electronic
available online
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Morphology, structure, and optical properties of semiconductor films with GeSiSn nanoislands and strained layers V. Timofeev, A. I. Nikiforov, A. R. Tuktamyshev [et al.] by Nikiforov, Alexander I | Tuktamyshev, Artur R | Mashanov, Vladimir I | Yesin, Michail Yu | Bloshkin, Aleksei A | Timofeev, Vyacheslav F. Source: Nanoscale research lettersMaterial type: Article; Format:
electronic
available online
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