Growth of epitaxial SiSn films with high Sn content for IR converters V. A. Timofeev, A. I. Nikiforov, A. P. Kokhanenko [et.al.]
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ArticleSubject(s): дифракция | колебания | фотоника | кривые качания | эпитаксиальные пленкиGenre/Form: статьи в журналах Online resources: Click here to access online
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Russian physics journal Vol. 60, № 2. P. 354-359Abstract: Growth of SiSn compounds with a Sn content from 10 to 35% is studied. The morphology and surface structure of the SiSn layers are examined and the kinetic diagram of the morphological state of SiSn films is established in the temperature range of 150–450°C. During the growth of SiSn films from 150 to 300°C, oscillations of specular beam were observed. For the first time, periodic multilayer SiSn/Si structures with pseudomorphic monocrystalline SiSn layers with the Sn content from 10 to 25% are grown. The c(8×4) and (5×1) superstructures are identified during the growth of Si on the SiSn layer and the conditions are determined for the formation of the desired Si surface structure by controlling the growth temperature. From the diffraction reflection curves, the lattice parameter, the SiSn composition, and the period in the multilayer periodic structure are defined, which with high precision correspond to the specified values.
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Growth of SiSn compounds with a Sn content from 10 to 35% is studied. The morphology and surface structure of the SiSn layers are examined and the kinetic diagram of the morphological state of SiSn films is established in the temperature range of 150–450°C. During the growth of SiSn films from 150 to 300°C, oscillations of specular beam were observed. For the first time, periodic multilayer SiSn/Si structures with pseudomorphic monocrystalline SiSn layers with the Sn content from 10 to 25% are grown. The c(8×4) and (5×1) superstructures are identified during the growth of Si on the SiSn layer and the conditions are determined for the formation of the desired Si surface structure by controlling the growth temperature. From the diffraction reflection curves, the lattice parameter, the SiSn composition, and the period in the multilayer periodic structure are defined, which with high precision correspond to the specified values.
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