E-catalog        

Библиогр.: 37 назв.

Fabrication and characterization of titanium dioxide (TiO2) thin film on Al/TiO2/SiO2/p-Si MIS structure for the study of morphology, optical and electrical properties were reported. A transparent and high crystallinity of TiO2 thin films were prepared at room temperature (~25 °C) by sol–gel route. TiO2 sol suspension were prepared at molar ratio of TTIP:EtOH:AA = 2:15:1 using titanium tetra-isopropoxide (TTIP) and a mixture of absolute ethanol (EtOH) and acetic acid (AA) which used as a precursor and catalyst for the peptization, respectively. The TiO2 thin films were deposited on a thermally grown SiO2 layer of p-type silicon (100) substrates and were thermally treated at different annealing temperatures of 300, 500, 700 and 900 °C. For study of optical properties, the TiO2 thin films were deposited on a glass slides substrate and were annealed from 200 to 700 °C. The XRD results show that the presence of an amorphous TiO2 phases were transformed into the polycrystalline (anatase or rutile) with good crystallinity after treated at higher annealing temperatures. Besides, the surface roughness of TiO2 thin films increased with increasing annealing temperatures. In addition, the resistivity of the thin films decreased from 2.5751E+8 to 6.714E+7 Ω cm with the increasing temperatures. Moreover, the optical absorbance of TiO2 thin films exhibited high UV–visible light absorption with band gap energy shifted to the higher wavelength (low energy photons). The band gap energy (Eg) of the films decreased from 3.79 to 3.16 eV and from 3.95 to 3.75 eV significantly for direct band allowed and indirect band allowed, respectively, with the increasing annealing temperatures.