Studying the formation of Si (100) stepped surface in molecular-beam epitaxy M. Yu. Esin, Yu. Yu. Hervieu, V. A. Timofeev, A. I. Nikiforov
Material type: ArticleSubject(s): молекулярно-лучевая эпитаксия | молекулярные пучки | кремниевые подложкиGenre/Form: статьи в журналах Online resources: Click here to access online In: Russian physics journal Vol. 61, № 7. P. 1210-1214Abstract: Experimental studies of the formation of a stepped surface structure during molecular-beam epitaxy of silicon on a Si (100) substrate have been carried out in wide ranges of variation of the substrate temperature and silicon growth rate. The conditions of the transition from a two-domain structure of the Si (100) surface to a single-domain structure associated with the formation of diatomic steps are determined using reflection high-energy electron diffraction. It is shown that the effect of an increase in the substrate temperature on the transition to a single-domain structure is non-monotonic: a single-domain surface forms in the region of relatively low temperatures, whereas a two-domain surface forms at high temperatures. The transition to a single-domain structure during the experiment is possible only, if the silicon growth rate is increased above a certain minimum value.Библиогр.: 14 назв.
Experimental studies of the formation of a stepped surface structure during molecular-beam epitaxy of silicon on a Si (100) substrate have been carried out in wide ranges of variation of the substrate temperature and silicon growth rate. The conditions of the transition from a two-domain structure of the Si (100) surface to a single-domain structure associated with the formation of diatomic steps are determined using reflection high-energy electron diffraction. It is shown that the effect of an increase in the substrate temperature on the transition to a single-domain structure is non-monotonic: a single-domain surface forms in the region of relatively low temperatures, whereas a two-domain surface forms at high temperatures. The transition to a single-domain structure during the experiment is possible only, if the silicon growth rate is increased above a certain minimum value.
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