Laser-induced damage threshold of ZnGeP2 crystal for (sub)picosecond 1-μm laser pulse I. O. Kinyaevskiy, P. A. Danilov, S. I. Kudryashov [et al.]
Material type:
ArticleContent type: Текст Media type: электронный Subject(s): дифосфид цинка-германия | нелинейные кристаллы | порог лазерно-индуцированного поврежденияGenre/Form: статьи в журналах Online resources: Click here to access online
In:
Applied optics Vol. 62, № 1. P. 16-20Abstract: Laser-induced damage threshold (LIDT) was measured for a ZnGeP2 crystal 16 exposed to 0.3-9.5 ps 1030-nm laser pulses. Single-pulse LIDT fluence was ~0.22 J/cm2 for 17 the laser pulse widths of 0.3-3.5 ps and increased till 0.76 J/cm2 for 9.5-ps pulses. Multi-pulse 18 LIDT fluence for 0.3-ps pulses at repetition frequencies in the range of 100 Hz - 1 kHz was 19 ~0.053 J/cm2 and decreased further at higher – multi-kHz - pulse repetition frequencies. 20 Coating of the ZnGeP2 crystal surface by an anti-reflection multi-layer thin films increased 21 the multi-pulse LIDT by one order of magnitude – up to 0.62 J/cm2 (about 2 TW/cm2). The 22 significant increase in LIDT coupled with a decrease in reflection losses provides a way to 23 cardinally improve efficiency of frequency conversion of popular 1-μm ultrashort pulses into 24 mid- and far-IR ranges with a thin AR-coated ZnGeP2 crystal sample.
Библиогр.: 26 назв.
Laser-induced damage threshold (LIDT) was measured for a ZnGeP2 crystal 16 exposed to 0.3-9.5 ps 1030-nm laser pulses. Single-pulse LIDT fluence was ~0.22 J/cm2 for 17 the laser pulse widths of 0.3-3.5 ps and increased till 0.76 J/cm2 for 9.5-ps pulses. Multi-pulse 18 LIDT fluence for 0.3-ps pulses at repetition frequencies in the range of 100 Hz - 1 kHz was 19 ~0.053 J/cm2 and decreased further at higher – multi-kHz - pulse repetition frequencies. 20 Coating of the ZnGeP2 crystal surface by an anti-reflection multi-layer thin films increased 21 the multi-pulse LIDT by one order of magnitude – up to 0.62 J/cm2 (about 2 TW/cm2). The 22 significant increase in LIDT coupled with a decrease in reflection losses provides a way to 23 cardinally improve efficiency of frequency conversion of popular 1-μm ultrashort pulses into 24 mid- and far-IR ranges with a thin AR-coated ZnGeP2 crystal sample.
There are no comments on this title.