Investigation of the persistence conductivity and photoelectric characteristics in detectors with interdigital electrodes based on β-Ga2O3 V. M. Kalygina, A. V. Tsymbalov, A. V. Almaev [et al.]
Material type:
ArticleContent type: Текст Media type: электронный Subject(s): встречно-штыревые электроды | детекторы | остаточная проводимость | фотоэлектрические характеристики | эпитаксиальные слоиGenre/Form: статьи в журналах Online resources: Click here to access online
In:
Physica status solidi Vol. 259, № 2. P. 2100341 (1-6)Abstract: Herein, the electrical and photoelectric characteristics of solar-blind UV detectors based on β-Ga2O3 films with interdigital electrodes are presented. The sensors with interdigital electrodes have interelectrode spacing d = 5, 10, 30, and 50 μm. The structures exhibit high sensitivity to ultraviolet radiation with a wavelength of λ = 254 nm. The detectors with the smallest interelectrode spacing (5 μm) demonstrate the highest photocurrent value. The detectors have a saturation region on the current–voltage characteristics under UV irradiation, which shifts to the region of lower voltages with decreasing interelectrode spacing. A mechanism to explain the presence of the saturation region on the I–V characteristic is proposed. The sensors exhibit high value of a persistence photoconductivity, which decreases exponentially with an estimated value of the time constant t 1 = 59–63 s.
Библиогр.: 30 назв.
Herein, the electrical and photoelectric characteristics of solar-blind UV detectors based on β-Ga2O3 films with interdigital electrodes are presented. The sensors with interdigital electrodes have interelectrode spacing d = 5, 10, 30, and 50 μm. The structures exhibit high sensitivity to ultraviolet radiation with a wavelength of λ = 254 nm. The detectors with the smallest interelectrode spacing (5 μm) demonstrate the highest photocurrent value. The detectors have a saturation region on the current–voltage characteristics under UV irradiation, which shifts to the region of lower voltages with decreasing interelectrode spacing. A mechanism to explain the presence of the saturation region on the I–V characteristic is proposed. The sensors exhibit high value of a persistence photoconductivity, which decreases exponentially with an estimated value of the time constant t 1 = 59–63 s.
There are no comments on this title.