Scientific Library of Tomsk State University

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1.
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On the charge neutrality level and the electronic properties of interphase boundaries in the layered ε-GaSe semiconductor V. N. Brudnyi, S. Y. Sarkisov, A. V. Kosobutsky

by Brudnyi, Valentin N | Sarkisov, Sergey Yu | Kosobutsky, Alexey V.

Source: SemiconductorsMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
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2.
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Уровень зарядовой нейтральности и электронные свойства межфазных границ в слоистом полупроводнике ε-GaSe В. Н. Брудный, С. Ю. Саркисов, А. В. Кособуцкий

by Брудный, Валентин Натанович | Саркисов, Сергей Юрьевич | Кособуцкий, Алексей Владимирович | Томский государственный университет Физический факультет Кафедра физики полупроводников.

Source: Физика и техника полупроводниковMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
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3.
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Electronic properties of GaSe, InSe, GaS and GaTe layered semiconductors: charge neutrality level and interface barrier heights V. N. Brudnyi, S. Y. Sarkisov, A. V. Kosobutsky

by Brudnyi, Valentin N | Sarkisov, Sergey Yu | Kosobutsky, Alexey V.

Source: Semiconductor science and technologyMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
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