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UV photodetectors based on wide-gap AlGaN semiconductors A. V. Voytsekhovskii, S. N. Nesmelov by Voytsekhovskiy, Alexander V | Nesmelov, Sergey N | Томский государственный университет Радиофизический факультет Кафедра квантовой электроники и фотоники | Томский государственный университет Сибирский физико-технический университет Научные подразделения СФТИ. Source: Atomic and Molecular Pulsed Lasers : 12 International Conference, September 14-18, 2015, Tomsk, Russia : abstractsMaterial type: Article; Format:
electronic
available online
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Not fiction
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Specialized;
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Capacitance-voltage characteristics of CdHgTe MIS structures with single quantum wells based on HgTe A. V. Voytsekhovskiy, S. N. Nesmelov, S. M. Dzyadukh by Voytsekhovskiy, Alexander V | Nesmelov, Sergey N | Dzyadukh, Stanislav M | Томский государственный университет Радиофизический факультет Кафедра квантовой электроники и фотоники | Томский государственный университет Сибирский физико-технический институт Научные подразделения СФТИ. Source: СВЧ-техника и телекоммуникационные технологии : 25-я Международная Крымская конференция (КрыМиКо'2015), 6-12 сентября 2015 г., Севастополь, Крым, Россия : материалы конференции : в 2 т. Т. 2Material type: Article; Format:
electronic
available online
; Literary form:
Not fiction
; Audience:
Specialized;
Other title: Вольт-фарадные характеристики CdHgTe МДП-структур с одиночными квантовыми ямами на основе HgTe.Online access: Click here to access online Availability: No items available :
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Peculiarities of the external photoelectric effect in narrow-band semiconductors caused by soft X-ray radiation V. G. Sredin, A. V. Voytsekhovskiy, A. P. Melekhov, R. S. Ramakoti by Sredin, Victor G | Voytsekhovskiy, Alexander V | Melekhov, Andrey P | Ramakoti, Ravi S. Source: 7th International congress on energy fluxes and radiation effects (EFRE-2020 online), September 14–25, 2020, Tomsk, Russia : abstractsMaterial type: Article; Format:
electronic
available online
; Literary form:
Not fiction
; Audience:
Specialized;
Online access: Click here to access online Availability: No items available :
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Admittance characterization of pentacene metal-insulator-semiconductor capacitors with SiO2 and SiO2/Ga2O3 insulators in temperature range of 9-300 K A. V. Voytsekhovskiy, S. N. Nesmelov, V. A. Novikov [et al.] by Nesmelov, Sergey N | Novikov, Vadim A | Dzyadukh, Stanislav M | Kopylova, Tatyana N | Ivonin, Ivan V | Degtyarenko, Konstantin M | Tereshchenko, Evgeny V | Voytsekhovskiy, Alexander V. Source: Thin solid filmsMaterial type: Article; Format:
electronic
available online
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Admittance of metal-insulator-semiconductor structures based on graded-gap HgCdTe grown by molecular-beam epitaxy on GaAs substrates A. V. Voytsekhovskiy, S. N. Nesmelov, S. M. Dzyadukh [et.al.] by Voytsekhovskiy, Alexander V | Dzyadukh, Stanislav M | Vasilev, Vladimir V | Varavin, Vasilii S | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Yakushev, Maxim V | Nesmelov, Sergey N | Томский государственный университет Радиофизический факультет Кафедра квантовой электроники и фотоники | Томский государственный университет Сибирский физико-технический институт Научные подразделения СФТИ. Source: Infrared physics and technologyMaterial type: Article; Format:
electronic
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Luminescence studies of HgCdTe‑ and InAsSb‑based quantum‑well structures I. I. Izhnin, A. I. Izhnin, O. I. Fitsych [et al.] by Izhnin, A. I | Fitsych, Olena I | Voytsekhovskiy, Alexander V | Gorn, Dmitriy Igorevich | Semakova, A. A | Bazhenov, N. L | Mynbaev, Karim D | Zegrya, G. G | Izhnin, Igor I. Source: Applied nanoscienceMaterial type: Article; Format:
electronic
available online
Online access: Click here to access online Availability: No items available :
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