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Study of spectral characteristics of materials for IR lasers based on II-VI semiconductors doped with iron-group ions I. S. Kurchatov, N. A. Bulychev, A. V. Bundyuk [et.al.]
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ArticleSubject(s): спектральные характеристики | инфракрасные лазеры | полупроводникиGenre/Form: статьи в журналах Online resources: Click here to access online
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Bulletin of the Lebedev Physics Institute Vol. 42, № 4. P. 107-109Abstract: The spectral features of the energy structure of Co2+, Ni2+, and Fe2+ ions in semiconductor materials ZnO, ZnS, ZnSe, ZnTe, CdO, CdS, CdSe, CdTe and the relation of these structures to the band gap are studied. The feasibility of lasing in these materials in the range of 1.5–3 µm is estimated.
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The spectral features of the energy structure of Co2+, Ni2+, and Fe2+ ions in semiconductor materials ZnO, ZnS, ZnSe, ZnTe, CdO, CdS, CdSe, CdTe and the relation of these structures to the band gap are studied. The feasibility of lasing in these materials in the range of 1.5–3 µm is estimated.
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