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Performance analysis of multilayer Ge/Si photodetector with quantum dots R. M. Dukhan, A. P. Kokhanenko, K. A. Lozovoy

By: Dukhan, Rahaf M. HContributor(s): Kokhanenko, Andrey P | Lozovoy, Kirill AMaterial type: ArticleArticleContent type: Текст Media type: электронный Subject(s): инфракрасные фотоприемники | квантовые точки | квантовые ямы | отношение сигнал/шум | обнаружительная способностьGenre/Form: статьи в журналах Online resources: Click here to access online In: Proceedings of SPIE Vol. 12086 : XV International Conference on Pulsed Lasers and Laser Applications, 2021, Tomsk, Russian Federation. P. 120861X-1-120861X-7Abstract: This paper reports results of a theoretical study of multilayer Ge/Si infrared photodetector parameters calculations, these calculations are of certain characteristics of detectors such as: dark current photocurrent and detectivity.
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This paper reports results of a theoretical study of multilayer Ge/Si infrared photodetector parameters calculations, these calculations are of certain characteristics of detectors such as: dark current photocurrent and detectivity.

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