Pulsed plasma-chemical modification of SiO2 nanopowder by ZnxOy nanoparticles R. Sazonov, G. Kholodnaya, D. Ponomarev [et al.]
Material type:
ArticleContent type: Текст Media type: электронный Subject(s): электроискровой метод | оксид цинка | оксид кремния | фотокатализаторы | нанопорошки | наночастицы | импульсно-плазменная модификацияGenre/Form: статьи в журналах Online resources: Click here to access online
In:
International journal of nanoscience Vol. 20, № 1. P. 2150005-1-2150005-8Abstract: This work presents the results of pulsed plasma-chemical modification of silicon dioxide nanopowder with zinc oxide nanoparticles (ZnO@SiO2). The obtained ZnO@SiO2 powders were characterized by transmission electron microscopy (TEM) and X-ray phase analysis. The size of the synthesized particles was in the range of 20-100nm. The photocatalytic characteristics of ZnO@SiO2 were studied. When exposed to ultraviolet radiation, the methylene blue (MB) decomposes efficiently. Two samples characterized by the content of silicon tetrachloride in the initial mixture were synthesized. The band gap estimated from the absorption spectra calculated from the diffuse reflectance spectra for these samples was 2.4eV and 2.95eV for indirect transitions and 3.03eV and 3.24eV for direct allowed transitions.
Библиогр.: 37 назв.
This work presents the results of pulsed plasma-chemical modification of silicon dioxide nanopowder with zinc oxide nanoparticles (ZnO@SiO2). The obtained ZnO@SiO2 powders were characterized by transmission electron microscopy (TEM) and X-ray phase analysis. The size of the synthesized particles was in the range of 20-100nm. The photocatalytic characteristics of ZnO@SiO2 were studied. When exposed to ultraviolet radiation, the methylene blue (MB) decomposes efficiently. Two samples characterized by the content of silicon tetrachloride in the initial mixture were synthesized. The band gap estimated from the absorption spectra calculated from the diffuse reflectance spectra for these samples was 2.4eV and 2.95eV for indirect transitions and 3.03eV and 3.24eV for direct allowed transitions.
There are no comments on this title.