Deep centers in TiO2-Si structures V. M. Kalygina, Y. S. Petrova, I. A. Prudaev [et.al.]
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ArticleSubject(s): оксид титана | пленки | термический отжиг | фотоэлектрические характеристикиGenre/Form: статьи в журналах Online resources: Click here to access online
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Semiconductors Vol. 49, № 8. P. 1012-1018Abstract: The effects of thermal annealing and exposure to oxygen plasma on the electrical and photoelectric properties of metal-TiO2-Si structures are investigated. The TiO2 films are fabricated by the rf magnetron sputtering of a titanium-oxide target onto unheated n-Si substrates. The forward and reverse currents of the structures after annealing in argon at 500°C are lower than those after annealing at 750°C. Exposure of the titanium-dioxide films to oxygen plasma led to a decrease in the currents at all annealing temperatures. It is supposed that the I–V characteristics of the TiO2-Si structures can be described using the model of space-charge-limited currents. The photoelectric characteristics of the samples are investigated via illumination at a wavelength of λ = 400 nm. The TiO2-Si structures annealed at 500°C without exposure to oxygen plasma exhibit frozen photoconductivity. The relaxation time is 23 ± 2 min.
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The effects of thermal annealing and exposure to oxygen plasma on the electrical and photoelectric properties of metal-TiO2-Si structures are investigated. The TiO2 films are fabricated by the rf magnetron sputtering of a titanium-oxide target onto unheated n-Si substrates. The forward and reverse currents of the structures after annealing in argon at 500°C are lower than those after annealing at 750°C. Exposure of the titanium-dioxide films to oxygen plasma led to a decrease in the currents at all annealing temperatures. It is supposed that the I–V characteristics of the TiO2-Si structures can be described using the model of space-charge-limited currents. The photoelectric characteristics of the samples are investigated via illumination at a wavelength of λ = 400 nm. The TiO2-Si structures annealed at 500°C without exposure to oxygen plasma exhibit frozen photoconductivity. The relaxation time is 23 ± 2 min.
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