Scientific Library of Tomsk State University

   E-catalog        

Refine your search


База знаний по целевым капиталам

  •    Эндаумент
       Фандрайзинг
       Нормативные документы

  • Your search returned 32 results.

    1.
    Temperature and field dependences of parameters of the equivalent circuit elements of MIS structures based on MBE n-Hg0.775Cd0.225Te in the strong inversion mode A. V. Voytsekhovskii, S. N. Nesmelov, S. M. Dzyadukh

    by Voytsekhovskiy, Alexander V | Nesmelov, Sergey N | Dzyadukh, Stanislav M.

    Source: Russian physics journalMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    2.
    Hysteresis phenomena in mis structures based on graded-gap MBE HgCdTe with a two-layer plasma-chemical insulator SiO2/Si3N4 A. V. Voytsekhovskiy, S. N. Nesmelov, S. M. Dzyadukh

    by Voytsekhovskiy, Alexander V | Nesmelov, Sergey N | Dzyadukh, Stanislav M.

    Source: Russian physics journalMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    3.
    Influence of the compositional grading on concentration of majority charge carriers in near-surface layers of n(p)-HgCdTe grown by molecular beam epitaxy A. V. Voitsekhovskii, S. N. Nesmelov, S. M. Dzyadukh

    by Voytsekhovskiy, Alexander V | Nesmelov, Sergey N | Dzyadukh, Stanislav M.

    Source: Journal of electronic materialsMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    4.
    Electron concentration in the near-surface graded-gap layer of MBE n-Hg1–xCdxTe (x = 0.22–0.40) determined from the capacitance measurements of MIS-structures A. V. Voytsekhovskii, S. N. Nesmelov, S. M. Dzyadukh [et.al.]

    by Voytsekhovskiy, Alexander V | Dzyadukh, Stanislav M | Grigoryev, Denis V | Lyapunov, D. V | Nesmelov, Sergey N.

    Source: Russian physics journalMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    5.
    Admittance of MIS structures based on MBE Hg1 –xCdxTe (x = 0.21–0.23) in a wide temperature range A. V. Voytsekhovskiy, N. A. Kulchitsky, S. N. Nesmelov, S. M. Dzyadukh

    by Kulchitskii, N. A | Nesmelov, Sergey N | Dzyadukh, Stanislav M | Voytsekhovskiy, Alexander V.

    Source: Journal of communications technology and electronicsMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    6.
    Capacitance–voltage characteristics of metal–insulator–semiconductor structures based on graded-gap HgCdTe with various insulators A. V. Voitsekhovskii, S. N. Nesmelov, S. M. Dzyadukh

    by Voytsekhovskiy, Alexander V | Nesmelov, Sergey N | Dzyadukh, Stanislav M | Томский государственный университет Радиофизический факультет Кафедра квантовой электроники и фотоники | Томский государственный университет Сибирский физико-технический институт Научные подразделения СФТИ.

    Source: Thin solid filmsMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    7.
    Photoelectrical characteristics of metal-insulator-semiconductor structures based on graded-gap HgCdTe grown by molecular-beam epitaxy A. V. Voitsekhovskii, S. N. Nesmelov, S. M. Dzyadukh

    by Voytsekhovskiy, Alexander V | Nesmelov, Sergey N | Dzyadukh, Stanislav M | Томский государственный университет Радиофизический факультет Кафедра квантовой электроники и фотоники | Томский государственный университет Сибирский физико-технический институт Научные подразделения СФТИ.

    Source: Thin solid filmsMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    8.
    Differential conductance and capacity-voltage characteristics of MIS structures with single quantum wells based on HgTe D. I. Gorn, A. V. Voitsekhovskii, S. M. Dzyadukh, S. N. Nesmelov

    by Gorn, Dmitriy Igorevich | Dzyadukh, Stanislav M | Nesmelov, Sergey N | Voytsekhovskiy, Alexander V | Томский государственный университет Радиофизический факультет Кафедра квантовой электроники и фотоники | Томский государственный университет Сибирский физико-технический институт Научные подразделения СФТИ.

    Source: International Journal of NanotechnologyMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    9.
    Influence of plasma volume discharge in atmospheric-pressure air on the admittance of MIS structures based on MBE p-HgCdTe A. V. Voytsekhovskii, S. N. Nesmelov, S. M. Dzyadukh [et.al.]

    by Voytsekhovskiy, Alexander V | Dzyadukh, Stanislav M | Grigoryev, Denis V | Tarasenko, Viktor Fedotovich | Shulepov, Mikhail A | Nesmelov, Sergey N.

    Source: Journal of Physics: Conference SeriesMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    10.
    Capacitive properties of metal-insulator-semiconductor systems based on an HgCdTe nBn structure grown by molecular beam epitaxy A. V. Voytsekhovskiy, S. N. Nesmelov, S. M. Dzyadukh [et al.]

    by Nesmelov, Sergey N | Dzyadukh, Stanislav M | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Sidorov, Georgiy Yu | Yakushev, Maxim V | Voytsekhovskiy, Alexander V.

    Source: Journal of communications technology and electronicsMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    11.
    Electro-physical characteristics of MIS structures with HgTe-based single quantum wells S. Dzyadukh, S. Nesmelov, A. Voytsekhovskiy, D. Gorn

    by Dzyadukh, Stanislav M | Voytsekhovskiy, Alexander V | Gorn, Dmitriy Igorevich | Nesmelov, Sergey N.

    Source: Journal of Physics: Conference SeriesMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    12.
    An experimental study of the dynamic resistance in surface leakage limited nBn structures based on HgCdTe grown by molecular beam epitaxy A. V. Voytsekhovskiy, S. N. Nesmelov, S. M. Dzyadukh [et al.]

    by Voytsekhovskiy, Alexander V | Nesmelov, Sergey N | Dzyadukh, Stanislav M | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Sidorov, Georgiy Yu | Yakushev, Maxim V.

    Source: Journal of electronic materialsMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    13.
    Diffusion limitation of dark current in the nBn structures based on the MBE HgCdTe A. V. Voytsekhovskiy, S. N. Nesmelov, S. M. Dzyadukh [et al.]

    by Voytsekhovskiy, Alexander V | Nesmelov, Sergey N | Dzyadukh, Stanislav M | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Sidorov, Georgiy Yu | Yakushev, Maxim V.

    Source: Journal of communications technology and electronicsMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    14.
    Admittance of barrier structures based on mercury cadmium telluride A. V. Voytsekhovskiy, S. N. Nesmelov, S. M. Dzyadukh [et al.]

    by Nesmelov, Sergey N | Dzyadukh, Stanislav M | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Sidorov, Georgiy Yu | Yakushev, Maxim V | Voytsekhovskiy, Alexander V.

    Source: Russian physics journalMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    15.
    Admittance of metal-insulator-semiconductor structures based on graded-gap HgCdTe grown by molecular-beam epitaxy on GaAs substrates A. V. Voytsekhovskiy, S. N. Nesmelov, S. M. Dzyadukh [et.al.]

    by Voytsekhovskiy, Alexander V | Dzyadukh, Stanislav M | Vasilev, Vladimir V | Varavin, Vasilii S | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Yakushev, Maxim V | Nesmelov, Sergey N | Томский государственный университет Радиофизический факультет Кафедра квантовой электроники и фотоники | Томский государственный университет Сибирский физико-технический институт Научные подразделения СФТИ.

    Source: Infrared physics and technologyMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    16.
    Admittance dependences of the mid-wave infrared barrier structure based on HgCdTe grown by molecular beam epitaxy A. V. Voytsekhovskii, S. N. Nesmelov, S. M. Dzyadukh [et al.]

    by Nesmelov, Sergey N | Dzyadukh, Stanislav M | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Sidorov, Georgiy Yu | Yakushev, Maxim V | Voytsekhovskiy, Alexander V.

    Source: Materials research expressMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    17.
    Admittance of MIS-structures based on HgCdTe with a double-layer CdTe/Al2O3 insulator S. M. Dzyadukh, A. V. Voitsekhovskii, S. N. Nesmelov [et al.]

    by Voytsekhovskiy, Alexander V | Nesmelov, Sergey N | Sidorov, Georgiy Yu | Varavin, Vasilii S | Vasilev, Vladimir V | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Yakushev, Maxim V | Dzyadukh, Stanislav M.

    Source: Russian physics journalMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    18.
    Effect of pulse nanosecond volume discharge in air at atmospheric pressure on electrical properties of MIS structures based on p-HgCdTe grown by molecular beam epitaxy A. V. Voytsekhovskii, S. N. Nesmelov, S. M. Dzyadukh [et.al.]

    by Voytsekhovskiy, Alexander V | Dzyadukh, Stanislav M | Grigoryev, Denis V | Tarasenko, Viktor Fedotovich | Shulepov, Mikhail A | Nesmelov, Sergey N.

    Source: Russian physics journalMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    19.
    Investigation of admittance for CdHgTe-based MIS-structures with single quantum wells under the wide temperature range (8-200) K A. V. Voitsekhovskii, S. N. Nesmelov, S. M. Dzyadukh, D. I. Gorn

    by Voytsekhovskiy, Alexander V | Dzyadukh, Stanislav M | Gorn, Dmitriy Igorevich | Nesmelov, Sergey N | Томский государственный университет Радиофизический факультет Кафедра квантовой электроники и фотоники | Томский государственный университет Сибирский физико-технический институт Научные подразделения СФТИ | Томский государственный университет Научное управление Лаборатории НУ.

    Source: СВЧ-техника и телекоммуникационные технологии : 25-я Международная Крымская конференция (КрыМиКо'2015), 6-12 сентября 2015 г., Севастополь, Крым, Россия : материалы конференции : в 2 т. Т. 2Material type: Article Article; Format: electronic available online remote; Literary form: Not fiction ; Audience: Specialized; Online access: Click here to access online Availability: No items available :
    20.
    Admittance of metal-insulator-semiconductor devices based on HgCdTe nBn structures A. V. Voytsekhovskii, S. N. Nesmelov, S. M. Dzyadukh [et al.]

    by Nesmelov, Sergey N | Dzyadukh, Stanislav M | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Sidorov, Georgiy Yu | Yakushev, Maxim V | Voytsekhovskiy, Alexander V.

    Source: Semiconductor science and technologyMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    21.
    Electrical properties of nBn structures based on HgCdTe grown by molecular beam epitaxy on GaAs substrates A. V. Voytsekhovskiy, S. N. Nesmelov, S. M. Dzyadukh и др.

    by Nesmelov, Sergey N | Dzyadukh, Stanislav M | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Sidorov, Georgiy Yu | Yakushev, Maxim V | Voytsekhovskiy, Alexander V.

    Source: Infrared physics and technologyMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    22.
    The effect of As+ Ion implantation and annealing on the electrical properties of near-surface layers in graded-gap n-Hg0.78Cd0.22Te films A. V. Voytsekhovskiy, S. N. Nesmelov, S. M. Dzyadukh [et al.]

    by Voytsekhovskiy, Alexander V | Nesmelov, Sergey N | Dzyadukh, Stanislav M | Varavin, Vasilii S | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Sidorov, Georgiy Yu | Yakushev, Maxim V | Marin, Denis V.

    Source: Technical physics lettersMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    23.
    Investigation of the differential resistance of MIS structures based on n-Hg0.78Cd0.22Te with near-surface graded-gap layers A. V. Voytsekhovskiy, N. A. Kulchitskii, S. N. Nesmelov [et al.]

    by Voytsekhovskiy, Alexander V | Kulchitskii, N. A | Nesmelov, Sergey N | Dzyadukh, Stanislav M | Varavin, Vasilii S | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Yakushev, Maxim V | Sidorov, Georgiy Yu.

    Source: Journal of communications technology and electronicsMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    24.
    Unipolar barrier structures based on HgCdTe for infrared detection A. V. Voytsekhovskiy, S. N. Nesmelov, S. M. Dzyadukh [et al.]

    by Voytsekhovskiy, Alexander V | Nesmelov, Sergey N | Dzyadukh, Stanislav M | Gorn, Dmitriy Igorevich | Kashirskii, Danila E | Lozovoy, Kirill A | Dirko, Vladimir V | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Sidorov, Georgiy Yu.

    Source: Pulsed lasers and laser applications AMPL-2021 : the 15th International conference, September 12-17, 2021, Tomsk, Russia : abstractsMaterial type: Article Article; Format: electronic available online remote; Literary form: Not fiction ; Audience: Specialized; Online access: Click here to access online Availability: No items available :
    25.
    Electrical properties of n‑HgCdTe MIS structures with HgTe single quantum wells I. I. Izhnin, I. I. Syvorotka, A. V. Voytsekhovskiy [et al.]

    by Syvorotka, I. I | Voytsekhovskiy, Alexander V | Nesmelov, Sergey N | Dzyadukh, Stanislav M | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Izhnin, Igor I.

    Source: Applied nanoscienceMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    26.
    Influence of pulsed nanosecond volume discharge in atmospheric-pressure air on the electrical characteristics of MCT epitaxial films D. V. Grigoryev, A. V. Voytsekhovskiy, K. A. Lozovoy [et.al.]

    by Grigoryev, Denis V | Lozovoy, Kirill A | Nesmelov, Sergey N | Dzyadukh, Stanislav M | Tarasenko, Viktor Fedotovich | Shulepov, Mikhail A | Dvoretsky, Sergei A | Voytsekhovskiy, Alexander V.

    Source: Proceedings of SPIEMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    27.
    Investigation of the effect of thermal annealing on the electrical properties of the near-surface layer of MBE n-HgCdTe using MIS techniques A. V. Voytsekhovskii, S. N. Nesmelov, S. M. Dzyadukh [et al.]

    by Nesmelov, Sergey N | Dzyadukh, Stanislav M | Varavin, Vasilii S | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Sidorov, Georgiy Yu | Yakushev, Maxim V | Marin, Denis V | Voytsekhovskiy, Alexander V.

    Source: Journal of electronic materialsMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    28.
    Dark currents of unipolar barrier structures based on mercury cadmium telluride for long-wave IR detectors A. V. Voytsekhovskiy, S. N. Nesmelov, S. M. Dzyadukh [et al.]

    by Voytsekhovskiy, Alexander V | Nesmelov, Sergey N | Dzyadukh, Stanislav M | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Sidorov, Georgiy Yu | Yakushev, Maxim V.

    Source: Russian physics journalMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    29.
    Admittance of barrier nanostructures based on MBE HgCdTe I. I. Izhnin, A. V. Voytsekhovskii, S. N. Nesmelov [et al.]

    by Izhnin, Igor I | Voytsekhovskiy, Alexander V | Nesmelov, Sergey N | Dzyadukh, Stanislav M | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Sidorov, Georgiy Yu | Yakushev, Maxim V.

    Source: Applied nanoscienceMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    30.
    Influence of As+ Ion implantation on properties of MBE HgCdTe near-surface layer characterized by metal–insulator–semiconductor techniques A. V. Voytsekhovskiy, S. N. Nesmelov, S. M. Dzyadukh [et al.]

    by Voytsekhovskiy, Alexander V | Nesmelov, Sergey N | Dzyadukh, Stanislav M | Varavin, Vasilii S | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Sidorov, Georgiy Yu | Yakushev, Maxim V | Marin, Denis V.

    Source: Journal of electronic materialsMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    31.
    Unipolar semiconductor barrier structures for infrared photodetector arrays (Review) I. D. Burlakov, N. A. Kulchitskii, A. V. Voytsekhovskiy [et al.]

    by Burlakov, I. D | Kulchitskii, N. A | Voytsekhovskiy, Alexander V | Nesmelov, Sergey N | Dzyadukh, Stanislav M | Gorn, Dmitriy Igorevich.

    Source: Journal of communications technology and electronicsMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    32.
    Admittance studies of modification of HgCdTe surface properties with ion implantation and thermal annealing A. G. Korotaev, A. V. Voytsekhovskiy, I. I. Izhnin [et al.]

    by Voytsekhovskiy, Alexander V | Izhnin, Igor I | Mynbaev, Karim D | Nesmelov, Sergey N | Dzyadukh, Stanislav M | Varavin, Vasilii S | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Yakushev, Maxim V | Korotaev, Alexander G | Sidorov, Georgiy Yu.

    Source: Surface and coatings technologyMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :