Scientific Library of Tomsk State University

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1.
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On the effect of ballistic overflow on the temperature dependence of the quantum efficiency of InGaN/GaN multiple quantum well light-emitting diodes I. A. Prudaev, V. V. Kopyev, I. S. Romanov, V. L. Oleynik

by Kopyev, Viktor V | Romanov, I. S | Oleynik, V. L | Prudaev, Ilya A.

Source: SemiconductorsMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
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2.
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Temperature dependence of quantum efficiency of InGaN/GaN led structures at high current density I. A. Prudaev, V. V. Kopyev, I. S. Romanov, V. N. Brudnyi

by Prudaev, Ilya A | Romanov, I. S | Brudnyi, Valentin N | Kopyev, Viktor V | Томский государственный университет Физический факультет Кафедра физики полупроводников.

Source: Russian physics journalMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
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