Effect of pulse nanosecond volume discharge in air at atmospheric pressure on electrical properties of MIS structures based on p-HgCdTe grown by molecular beam epitaxy A. V. Voytsekhovskii, S. N. Nesmelov, S. M. Dzyadukh [et.al.]
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ArticleSubject(s): теллурид кадмия-ртути | молекулярно-лучевая эпитаксия | наносекундные разряды | адмиттанс | МДП-структурыGenre/Form: статьи в журналах Online resources: Click here to access online
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Russian physics journal Vol. 58, № 7. P. 970-977Abstract: The effect of the pulse nanosecond volume discharge in air at atmospheric pressure on the admittance of MIS structures based on MBE graded-gap p-Hg0.78Cd0.22Te is studied in a wide range of frequencies and temperatures. It is shown that the impact of the discharge leads to significant changes in electrical characteristics of MIS structures (the density of positive fixed charge increases), to the changes in the nature of the hysteresis of capacitance-voltage characteristics, and to an increase in the density of surface states. A possible reason for the changes in the characteristics of MIS structures after exposure to the discharge is substantial restructuring of the defect-impurity system of the semiconductor near the interface.
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The effect of the pulse nanosecond volume discharge in air at atmospheric pressure on the admittance of MIS structures based on MBE graded-gap p-Hg0.78Cd0.22Te is studied in a wide range of frequencies and temperatures. It is shown that the impact of the discharge leads to significant changes in electrical characteristics of MIS structures (the density of positive fixed charge increases), to the changes in the nature of the hysteresis of capacitance-voltage characteristics, and to an increase in the density of surface states. A possible reason for the changes in the characteristics of MIS structures after exposure to the discharge is substantial restructuring of the defect-impurity system of the semiconductor near the interface.
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