Scientific Library of Tomsk State University

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1.
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Comparative analysis of germanium-silicon quantum dots formation on Si(100), Si(111) and Sn/Si(100) surfaces K. A. Lozovoy, A. P. Kokhanenko, A. V. Voitsekhovskii

by Lozovoy, Kirill A | Kokhanenko, Andrey P | Voytsekhovskiy, Alexander V.

Source: NanotechnologyMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
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2.
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Comparison of the growth processes of germanium quantum dots on the Si (100) and Si(111) surfaces A. P. Kokhanenko, K. A. Lozovoy, A. V. Voitsekhovskii

by Kokhanenko, Andrey P | Lozovoy, Kirill A | Voytsekhovskiy, Alexander V.

Source: Russian physics journalMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
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3.
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Critical thickness of transition from 2D to 3D growth and peculiarities of quantum dots formation in GexSi1-x/Sn/Si and Ge1-ySny/Si systems K. A. Lozovoy, A. P. Kokhanenko, A. V. Voitsekhovskii

by Lozovoy, Kirill A | Kokhanenko, Andrey P | Voytsekhovskiy, Alexander V.

Source: Surface scienceMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
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