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  • Your search returned 9 results.

    1.
    Low-temperature transport of charge carriers in InGaN/GaN multiple quantum well light-emitting diodes I. Prudaev, O. Tolbanov, S. Khludkov

    by Prudaev, Ilya A | Tolbanov, Oleg P | Khludkov, Stanislav S | Томский государственный университет Радиофизический факультет Научные подразделения РФФ.

    Source: Physica status solidi AMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    2.
    Fabrication and investigation of indium nitride possessing ferromagnetic properties S. S. Khludkov, I. A. Prudaev, O. P. Tolbanov

    by Khludkov, Stanislav S | Prudaev, Ilya A | Tolbanov, Oleg P.

    Source: Russian physics journalMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    3.
    Photoluminescence and terahertz generation in InGaN/GaN multiple quantum well light-emitting diode heterostructures under laser excitation I. Prudaev, S. Sarkisov, O. Tolbanov, A. Kosobutsky

    by Prudaev, Ilya A | Tolbanov, Oleg P | Kosobutsky, Alexey V | Sarkisov, Sergey Yu | Томский государственный университет Радиофизический факультет Научные подразделения РФФ.

    Source: Physica status solidi BMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    4.
    Diffusion of magnesium in LED structures with InGaN/GaN quantum wells at true growth temperatures 860-980°C of p-GaN I. S. Romanov, I. A. Prudaev, V. N. Brudnyi

    by Romanov, I. S | Prudaev, Ilya A | Brudnyi, Valentin N.

    Source: Russian physics journalMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    5.
    Hopping transport of charge carriers in LEDs based on multiple InGaN/GaN quantum wells I. Prudaev, Y. L. Zubrilkina, A. A. Baktybaev, I. S. Romanov

    by Prudaev, Ilya A | Baktybaev, A. A | Romanov, I. S | Zubrilkina, Yu. L | Томский государственный университет Радиофизический факультет Кафедра полупроводниковой электроники | Томский государственный университет Радиофизический факультет Научные подразделения РФФ.

    Source: Russian physics journalMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    6.
    Generation of terahertz radiation in LED heterostructures with multiple InGaN/GaN quantum wells at two-photon excitation by femtosecond I. A. Prudaev, S. Y. Sarkisov, O. P. Tolbanov, А. V. Kosobutsky

    by Prudaev, Ilya A | Tolbanov, Oleg P | Kosobutsky, Alexey V | Sarkisov, Sergey Yu | Томский государственный университет Радиофизический факультет Научные подразделения РФФ.

    Source: Russian physics journalMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    7.
    Temperature dependence of quantum efficiency of InGaN/GaN led structures at high current density I. A. Prudaev, V. V. Kopyev, I. S. Romanov, V. N. Brudnyi

    by Prudaev, Ilya A | Romanov, I. S | Brudnyi, Valentin N | Kopyev, Viktor V | Томский государственный университет Физический факультет Кафедра физики полупроводников.

    Source: Russian physics journalMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    8.
    Led InGaN/GaN structures with short-period superlattice grown on flat and patterned sapphire substrates I. S. Romanov, I. A. Prudaev, V. N. Brudnyi [et.al.]

    by Romanov, I. S | Brudnyi, Valentin N | Kopyev, Viktor V | Novikov, Vadim A | Marmalyuk, A. A | Kureshov, V. A | Sabitov, D. R | Mazalov, A. V | Prudaev, Ilya A | Томский государственный университет Радиофизический факультет Кафедра квантовой электроники и фотоники | Томский государственный университет Радиофизический факультет Кафедра полупроводниковой электроники.

    Source: Russian physics journalMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    9.
    Effect of the barrier thickness on the optical properties of InGaN/GaN/Al2O3 (0001) LED heterostructures I. S. Romanov, I. A. Prudaev, V. N. Brudnyi [et.al.]

    by Romanov, I. S | Brudnyi, Valentin N | Kopyev, Viktor V | Novikov, Vadim A | Marmalyuk, A. A | Kureshov, V. A | Sabitov, D. R | Mazalov, A. V | Prudaev, Ilya A.

    Source: Russian physics journalMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :