Methods of preparation and temporal stability of gase and InSe nanolayers R. A. Redkin, D. A. Kobtsev, S. A. Bereznaya [et al.]
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ArticleContent type: Текст Media type: электронный Subject(s): селенид индия | селенид галлия | нанослои | квазидвумерные полупроводниковые наночастицы | физическое осаждение из паровой фазы | морфология поверхности | рамановские спектрыGenre/Form: статьи в журналах Online resources: Click here to access online
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Russian physics journal Vol. 63, № 9. P. 1504-1509Abstract: GaSe and InSe nanolayers were obtained by mechanical exfoliation and physical vapor deposition methods on silicon substrates. Employing atomic force microscopy the surface morphology and thickness of obtained InSe and GaSe nanolayers were studied, as well as their temporal stability. The observed spectral positions of the Raman peaks were in agreement with the positions of the peaks known for bulk and nanolayered InSe and GaSe samples
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GaSe and InSe nanolayers were obtained by mechanical exfoliation and physical vapor deposition methods on silicon substrates. Employing atomic force microscopy the surface morphology and thickness of obtained InSe and GaSe nanolayers were studied, as well as their temporal stability. The observed spectral positions of the Raman peaks were in agreement with the positions of the peaks known for bulk and nanolayered InSe and GaSe samples
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