Fermi level pinning and hydrostatic pressure effect in electron irradiated GaSb V. N. Brudnyi, I. V. Kamenskaya, P. A. Brudnyi
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ArticleContent type: Текст Media type: электронный Subject(s): уровень зарядовой нейтральности | радиационные эффекты | пьезосопротивление | антимонид галлияGenre/Form: статьи в журналах Online resources: Click here to access online
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Semiconductor science and technology Vol. 35, № 8. P. 085021 (1-5)Abstract: The effect of 2 MeV electron bombardment up to total electron dose of 1×1019cm−2 on the
electrical and piezo resistive properties of n- and p-type GaSb crystals was studied. The electron
irradiation leads to saturation of the hole concentration at about 5×1018cm−3 as a result of
Fermi level pinning near the valence band top in all irradiated samples. With this in mind, the
calculated data on the energy position of the charge neutrality level in GaSb were analyzed. The
pressure coefficient of resistivity αρ = ∂(lnρ)/∂P was measured as a function of Fermi level
position in the electron irradiated samples. Isochronal annealing of radiation-induced defects
was investigated in the temperature range of 20–400 ◦C.
Библиогр.: 30 назв.
The effect of 2 MeV electron bombardment up to total electron dose of 1×1019cm−2 on the
electrical and piezo resistive properties of n- and p-type GaSb crystals was studied. The electron
irradiation leads to saturation of the hole concentration at about 5×1018cm−3 as a result of
Fermi level pinning near the valence band top in all irradiated samples. With this in mind, the
calculated data on the energy position of the charge neutrality level in GaSb were analyzed. The
pressure coefficient of resistivity αρ = ∂(lnρ)/∂P was measured as a function of Fermi level
position in the electron irradiated samples. Isochronal annealing of radiation-induced defects
was investigated in the temperature range of 20–400 ◦C.
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