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GaN and ZnO-based Materials and Devices electronic resource edited by Stephen Pearton.

By: Pearton, Stephen [editor.]Contributor(s): SpringerLink (Online service)Material type: TextTextSeries: Springer Series in Materials SciencePublication details: Berlin, Heidelberg : Springer Berlin Heidelberg, 2012Description: XVIII, 486 p. online resourceContent type: text Media type: computer Carrier type: online resourceISBN: 9783642235214Subject(s): Crystallography | engineering | Optical materials | Surfaces (Physics) | Materials Science | Optical and Electronic Materials | Crystallography | Surfaces and Interfaces, Thin Films | Optics, Optoelectronics, Plasmonics and Optical Devices | Nanotechnology and Microengineering | Nanoscale Science and TechnologyDDC classification: 620.11295 | 620.11297 LOC classification: TA1750-1750.22Online resources: Click here to access online
Contents:
UV LEDs -- Non-Polar GaN Growth -- High-Quality AlGaN Alloys -- Bulk AlN for UV LEDs -- Enhancement of the Light-Extraction Efficiency of GaN-Based Light Emitting Diodes -- GaN-Based Sensors -- III-N Alloys for Solar Power Conversion -- GaN HEMT Technology -- GaN Power Devices -- Nitride Nanostructures -- Radiation-Induced Defects in GaN -- Electron Injection Effects in GaN -- Progress and Prospect of Rare-Earth Nitrides -- Advances in PLD of ZnO and Related Compounds -- ZnO Nanowires and p-Type Doping -- Multifunctional ZnO Structures -- ZnO/MgZnO Quantum Wells -- GZO TFTs.
In: Springer eBooksSummary: The AlInGaN and ZnO materials systems have proven to be one of the scientifically and technologically important areas of development over the past 15 years, with applications in UV/visible optoelectronics and in high-power/high-frequency microwave devices. The pace of advances in these areas has been remarkable and the wide band gap community relies on books like the one we are proposing to provide a review and summary of recent progress.
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UV LEDs -- Non-Polar GaN Growth -- High-Quality AlGaN Alloys -- Bulk AlN for UV LEDs -- Enhancement of the Light-Extraction Efficiency of GaN-Based Light Emitting Diodes -- GaN-Based Sensors -- III-N Alloys for Solar Power Conversion -- GaN HEMT Technology -- GaN Power Devices -- Nitride Nanostructures -- Radiation-Induced Defects in GaN -- Electron Injection Effects in GaN -- Progress and Prospect of Rare-Earth Nitrides -- Advances in PLD of ZnO and Related Compounds -- ZnO Nanowires and p-Type Doping -- Multifunctional ZnO Structures -- ZnO/MgZnO Quantum Wells -- GZO TFTs.

The AlInGaN and ZnO materials systems have proven to be one of the scientifically and technologically important areas of development over the past 15 years, with applications in UV/visible optoelectronics and in high-power/high-frequency microwave devices. The pace of advances in these areas has been remarkable and the wide band gap community relies on books like the one we are proposing to provide a review and summary of recent progress.

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