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	1.	No cover image available Peculiarities of modeling the frequency dependences of admittance of MIS structure based on organic P3HT film with an insulator Al2O3 layer A. V. Voytsekhovskiy, S. N. Nesmelov, S. M. Dzyadukh by Voytsekhovskiy, Alexander V \| Nesmelov, Sergey N \| Dzyadukh, Stanislav M. Source: Russian physics journalMaterial type: Article; Format: electronic available online Online access: Click here to access online Availability: No items available : Log in to add tags Add to cart (remove)
	2.	No cover image available Admittance characterization of pentacene metal-insulator-semiconductor capacitors with SiO2 and SiO2/Ga2O3 insulators in temperature range of 9-300 K A. V. Voytsekhovskiy, S. N. Nesmelov, V. A. Novikov [et al.] by Nesmelov, Sergey N \| Novikov, Vadim A \| Dzyadukh, Stanislav M \| Kopylova, Tatyana N \| Ivonin, Ivan V \| Degtyarenko, Konstantin M \| Tereshchenko, Evgeny V \| Voytsekhovskiy, Alexander V. Source: Thin solid filmsMaterial type: Article; Format: electronic available online Online access: Click here to access online Availability: No items available : Log in to add tags Add to cart (remove)
	3.	No cover image available Capacitance-voltage characteristics of CdHgTe MIS structures with single quantum wells based on HgTe A. V. Voytsekhovskiy, S. N. Nesmelov, S. M. Dzyadukh by Voytsekhovskiy, Alexander V \| Nesmelov, Sergey N \| Dzyadukh, Stanislav M \| Томский государственный университет Радиофизический факультет Кафедра квантовой электроники и фотоники \| Томский государственный университет Сибирский физико-технический институт Научные подразделения СФТИ. Source: СВЧ-техника и телекоммуникационные технологии : 25-я Международная Крымская конференция (КрыМиКо'2015), 6-12 сентября 2015 г., Севастополь, Крым, Россия : материалы конференции : в 2 т. Т. 2Material type: Article; Format: electronic available online ; Literary form: Not fiction ; Audience: Specialized; Other title: Вольт-фарадные характеристики CdHgTe МДП-структур с одиночными квантовыми ямами на основе HgTe.Online access: Click here to access online Availability: No items available : Log in to add tags Add to cart (remove)
	4.	No cover image available Admittance of pentacene-based MIS-structures with two-layer insulator SiO2-Al2O3 A. V. Voytsekhovskiy, S. N. Nesmelov, S. M. Dzyadukh [et al.] by Voytsekhovskiy, Alexander V \| Nesmelov, Sergey N \| Dzyadukh, Stanislav M \| Kopylova, Tatyana N \| Degtyarenko, Konstantin M. Source: Russian physics journalMaterial type: Article; Format: electronic available online Online access: Click here to access online Availability: No items available : Log in to add tags Add to cart (remove)
	5.	No cover image available Admittance of organic LED structures with an emission YAK-203 layer A. V. Voytsekhovskii, S. N. Nesmelov, S. M. Dzyadukh [et al.] by Nesmelov, Sergey N \| Dzyadukh, Stanislav M \| Kopylova, Tatyana N \| Degtyarenko, Konstantin M \| Kokhanenko, Andrey P \| Voytsekhovskiy, Alexander V. Source: Russian physics journalMaterial type: Article; Format: electronic available online Online access: Click here to access online Availability: No items available : Log in to add tags Add to cart (remove)
	6.	No cover image available Admittance of metal-insulator-semiconductor structures based on graded-gap HgCdTe grown by molecular-beam epitaxy on GaAs substrates A. V. Voytsekhovskiy, S. N. Nesmelov, S. M. Dzyadukh [et.al.] by Voytsekhovskiy, Alexander V \| Dzyadukh, Stanislav M \| Vasilev, Vladimir V \| Varavin, Vasilii S \| Dvoretsky, Sergei A \| Mikhailov, Nikolay N \| Yakushev, Maxim V \| Nesmelov, Sergey N \| Томский государственный университет Радиофизический факультет Кафедра квантовой электроники и фотоники \| Томский государственный университет Сибирский физико-технический институт Научные подразделения СФТИ. Source: Infrared physics and technologyMaterial type: Article; Format: electronic available online Online access: Click here to access online Availability: No items available : Log in to add tags Add to cart (remove)