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The relaxation of electrophysical properties HgCdTe epitaxial films affected by plasma of high frequency nanosecond volume discharge in atmospheric-pressure air A. G. Korotaev, D. V. Grigoryev, A. V. Voitsekhovskii [et al.]

Contributor(s): Grigoryev, Denis V | Voytsekhovskiy, Alexander V | Lozovoy, Kirill A | Tarasenko, Viktor Fedotovich | Ripenko, Vasilii S | Shulepov, Mikhail A | Erofeev, Mikhail V | Yakushev, Maxim V | Dvoretsky, Sergei A | Korotaev, Alexander G | Mikhailov, Nikolay N | Varavin, Vasilii SMaterial type: ArticleArticleContent type: Текст Media type: электронный Subject(s): эпитаксиальные пленки | электрофизические параметры | высокочастотный наносекундный диффузный разрядGenre/Form: статьи в журналах Online resources: Click here to access online In: Surface and coatings technology Vol. 387. P. 125527 (1-5)Abstract: In this work the results of the experimental investigation of the influence of the high-frequency nanosecond volume discharge in atmospheric pressure air on the electrophysical properties of epitaxial HgCdTe films are presented. Analysis of magnetic-field dependences of the Hall coefficient have shown that in the near-surface region of the material a high-conductivity n-type layer is formed as a result of irradiation. It is shown that relaxation of the values of the electrophysical parameters of the epitaxial films is observed after the irradiation. The supposition is made that the obtained experimental results may be explained by the formation of thin dielectric oxide film at the surface of the irradiated material, containing built-in fixed and mobile positive charge.
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In this work the results of the experimental investigation of the influence of the high-frequency nanosecond
volume discharge in atmospheric pressure air on the electrophysical properties of epitaxial HgCdTe films are
presented. Analysis of magnetic-field dependences of the Hall coefficient have shown that in the near-surface
region of the material a high-conductivity n-type layer is formed as a result of irradiation. It is shown that
relaxation of the values of the electrophysical parameters of the epitaxial films is observed after the irradiation.
The supposition is made that the obtained experimental results may be explained by the formation of thin
dielectric oxide film at the surface of the irradiated material, containing built-in fixed and mobile positive
charge.

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