E-catalog        

Библиогр.: 25 назв.

Oxygen and fluorine adsorption and their coadsorption on the (111) unreconstructed surface of semiconductors InAs and GaAs were studied using the projector augmented-wave method with the generalized gradient approximation for the exchange–correlation functional and hybrid functional approach. The energetically preferable adsorbate sites on the surface were determined. It is shown that fluorine adsorption above surface cations on the AIIIBV(111)A-(1 × 1) unreconstructed surface leads to a removal of the surface state formed by cation pz-orbitals and to an unpinning of the Fermi level, whereas oxygen adsorption induces additional surface states in the band gap. The influence of fluorine and oxygen coadsorption and also fluorine concentration on the surface states in the band gap is discussed. It is shown that oxygen-induced surface states are completely or partially removed from the band gap by fluorine coadsorption if it forms bonds with cation surface atoms involved in an interaction with oxygen. The increase of fluorine concentration leads to considerable changes of the near-surface-layer structure due to the penetration of both electronegative adsorbates into the substrate and affects the electron properties of oxygen/AIIIBV(111) interface.