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Atomic self-diffusion in TiNi A. V. Bakulin, T. I. Spiridonova, S. E. Kulkova

By: Bakulin, Alexander VContributor(s): Spiridonova, Tatiana I | Kulkova, Svetlana EMaterial type: ArticleArticleContent type: Текст Media type: электронный Subject(s): самодиффузия | никель | титан | интерметаллические соединения | точечные дефектыGenre/Form: статьи в журналах Online resources: Click here to access online In: Computational materials science Vol. 148. P. 1-9Abstract: The projector augmented wave method was applied to investigate the energetics of point defect formation at finite temperatures and the Ni-vacancy jumps in the intermetallic B2-TiNi alloy. It was shown that the effective formation energy of the Ni-vacancy (1.14 eV) is significantly lower than that of Ti-vacancy (1.74 eV); however, the antistructural atoms are dominant defects irrespective of alloy composition. The obtained results reveal that the migration barrier of the Ni-vacancy to the nearest-neighbor site is less (0.19 eV) than that for the Ni-vacancy jump to the next-nearest-neighbor site (1.64 eV). The Ni-vacancy implements two sequential nearest-neighbor jumps with short-lived intermediate configuration and some of such jumps initiate six-jump cycles of the Ni-vacancy along [0 0 1] and [1 1 0] directions with [0 0 1] bent mechanism as preferential one. In the latter case the calculated migration barrier of 0.82 eV is found to be in good agreement with experiment. The energy barrier for four-jump cycle flat mechanism is calculated by 0.27 eV higher. It is shown that the Ni-vacancy diffusion in B2-TiNi is strongly dominated by both six-jump cycle [0 0 1] bent and flat mechanisms at low temperatures but the contribution of the next-nearest-neighbor jumps become important with temperature increase.
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The projector augmented wave method was applied to investigate the energetics of point defect formation at finite temperatures and the Ni-vacancy jumps in the intermetallic B2-TiNi alloy. It was shown that the effective formation energy of the Ni-vacancy (1.14 eV) is significantly lower than that of Ti-vacancy (1.74 eV); however, the antistructural atoms are dominant defects irrespective of alloy composition. The obtained results reveal that the migration barrier of the Ni-vacancy to the nearest-neighbor site is less (0.19 eV) than that for the Ni-vacancy jump to the next-nearest-neighbor site (1.64 eV). The Ni-vacancy implements two sequential nearest-neighbor jumps with short-lived intermediate configuration and some of such jumps initiate six-jump cycles of the Ni-vacancy along [0 0 1] and [1 1 0] directions with [0 0 1] bent mechanism as preferential one. In the latter case the calculated migration barrier of 0.82 eV is found to be in good agreement with experiment. The energy barrier for four-jump cycle flat mechanism is calculated by 0.27 eV higher. It is shown that the Ni-vacancy diffusion in B2-TiNi is strongly dominated by both six-jump cycle [0 0 1] bent and flat mechanisms at low temperatures but the contribution of the next-nearest-neighbor jumps become important with temperature increase.

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