A method for determining the ambipolar diffusion length and carrier lifetime in GaAs p-i-n diodes G. I. Ayzenshtat, A. Y. Yushchenko
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ArticleSubject(s): амбиполярная диффузионная длина | переходные процессы | pin-диоды | время жизниGenre/Form: статьи в журналах Online resources: Click here to access online
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Instruments and experimental techniques Vol. 58, № 2. P. 107-110Abstract: It was determined that the forward loss resistance as a function of the radius of the active region of typical microwave p-i-n diodes depends on the ratio of the square of the ambipolar-diffusion length to the square of the radius of the diode active region. Based on this regularity, a method was developed that provides simple determination of the ambipolar-diffusion length and the carrier lifetime.
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It was determined that the forward loss resistance as a function of the radius of the active region of typical microwave p-i-n diodes depends on the ratio of the square of the ambipolar-diffusion length to the square of the radius of the diode active region. Based on this regularity, a method was developed that provides simple determination of the ambipolar-diffusion length and the carrier lifetime.
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