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	1.	No cover image available Admittance of MIS structures based on nBn systems of epitaxial HgCdTe for detection in the 3–5 μm spectral range A. V. Voytsekhovskiy, S. N. Nesmelov, S. M. Dzyadukh [et al.] by Voytsekhovskiy, Alexander V \| Nesmelov, Sergey N \| Dzyadukh, Stanislav M \| Dvoretsky, Sergei A \| Mikhailov, Nikolay N \| Sidorov, Georgiy Yu \| Yakushev, Maxim V. Source: Technical physics lettersMaterial type: Article; Format: electronic available online Online access: Click here to access online Availability: No items available : Log in to add tags Add to cart (remove)
	2.	No cover image available Admittance of barrier structures based on mercury cadmium telluride A. V. Voytsekhovskiy, S. N. Nesmelov, S. M. Dzyadukh [et al.] by Nesmelov, Sergey N \| Dzyadukh, Stanislav M \| Dvoretsky, Sergei A \| Mikhailov, Nikolay N \| Sidorov, Georgiy Yu \| Yakushev, Maxim V \| Voytsekhovskiy, Alexander V. Source: Russian physics journalMaterial type: Article; Format: electronic available online Online access: Click here to access online Availability: No items available : Log in to add tags Add to cart (remove)
	3.	No cover image available An experimental study of the dynamic resistance in surface leakage limited nBn structures based on HgCdTe grown by molecular beam epitaxy A. V. Voytsekhovskiy, S. N. Nesmelov, S. M. Dzyadukh [et al.] by Voytsekhovskiy, Alexander V \| Nesmelov, Sergey N \| Dzyadukh, Stanislav M \| Dvoretsky, Sergei A \| Mikhailov, Nikolay N \| Sidorov, Georgiy Yu \| Yakushev, Maxim V. Source: Journal of electronic materialsMaterial type: Article; Format: electronic available online Online access: Click here to access online Availability: No items available : Log in to add tags Add to cart (remove)
	4.	No cover image available Admittance of metal-insulator-semiconductor devices based on HgCdTe nBn structures A. V. Voytsekhovskii, S. N. Nesmelov, S. M. Dzyadukh [et al.] by Nesmelov, Sergey N \| Dzyadukh, Stanislav M \| Dvoretsky, Sergei A \| Mikhailov, Nikolay N \| Sidorov, Georgiy Yu \| Yakushev, Maxim V \| Voytsekhovskiy, Alexander V. Source: Semiconductor science and technologyMaterial type: Article; Format: electronic available online Online access: Click here to access online Availability: No items available : Log in to add tags Add to cart (remove)
	5.	No cover image available Admittance of barrier nanostructures based on MBE HgCdTe I. I. Izhnin, A. V. Voytsekhovskii, S. N. Nesmelov [et al.] by Izhnin, Igor I \| Voytsekhovskiy, Alexander V \| Nesmelov, Sergey N \| Dzyadukh, Stanislav M \| Dvoretsky, Sergei A \| Mikhailov, Nikolay N \| Sidorov, Georgiy Yu \| Yakushev, Maxim V. Source: Applied nanoscienceMaterial type: Article; Format: electronic available online Online access: Click here to access online Availability: No items available : Log in to add tags Add to cart (remove)
	6.	No cover image available Dark currents of unipolar barrier structures based on mercury cadmium telluride for long-wave IR detectors A. V. Voytsekhovskiy, S. N. Nesmelov, S. M. Dzyadukh [et al.] by Voytsekhovskiy, Alexander V \| Nesmelov, Sergey N \| Dzyadukh, Stanislav M \| Dvoretsky, Sergei A \| Mikhailov, Nikolay N \| Sidorov, Georgiy Yu \| Yakushev, Maxim V. Source: Russian physics journalMaterial type: Article; Format: electronic available online Online access: Click here to access online Availability: No items available : Log in to add tags Add to cart (remove)