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Peculiarities of the external photoelectric effect in narrow-band semiconductors caused by soft X-ray radiation V. G. Sredin, A. V. Voytsekhovskiy, A. P. Melekhov, R. S. Ramakoti by Sredin, Victor G | Voytsekhovskiy, Alexander V | Melekhov, Andrey P | Ramakoti, Ravi S. Source: 7th International congress on energy fluxes and radiation effects (EFRE-2020 online), September 14–25, 2020, Tomsk, Russia : abstractsMaterial type: Article; Format:
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UV photodetectors based on wide-gap AlGaN semiconductors A. V. Voytsekhovskii, S. N. Nesmelov by Voytsekhovskiy, Alexander V | Nesmelov, Sergey N | Томский государственный университет Радиофизический факультет Кафедра квантовой электроники и фотоники | Томский государственный университет Сибирский физико-технический университет Научные подразделения СФТИ. Source: Atomic and Molecular Pulsed Lasers : 12 International Conference, September 14-18, 2015, Tomsk, Russia : abstractsMaterial type: Article; Format:
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Calculation of parameters of detectors of terahertz range based on the system immersion lens-planar antenna-semiconductor sensing unit A. V. Barko, A. V. Voitsekhovskii, A. G. Levashkin, A. P. Kokhanenko by Barko, A. V | Levashkin, A. G | Kokhanenko, Andrey P | Voytsekhovskiy, Alexander V. Source: Actual problems of radiophysics : proceedings of the VI International cоnfеrеnсе "APR-2015", October, 5-10, 2015, Tomsk, RussiaMaterial type: Article; Format:
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Influence of pulsed nanosecond volume discharge in atmospheric-pressure air on the electrical characteristics of MCT epitaxial films D. V. Grigoryev, A. V. Voitsekhovskii, K. A. Lozovoy [et.al.] by Grigoryev, Denis V | Lozovoy, Kirill A | Tarasenko, Viktor Fedotovich | Shulepov, Mikhail A | Voytsekhovskiy, Alexander V. Source: Atomic and Molecular Pulsed Lasers : 12 International Conference, September 14-18, 2015, Tomsk, Russia : abstractsMaterial type: Article; Format:
electronic
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Capacitance-voltage characteristics of CdHgTe MIS structures with single quantum wells based on HgTe A. V. Voytsekhovskiy, S. N. Nesmelov, S. M. Dzyadukh by Voytsekhovskiy, Alexander V | Nesmelov, Sergey N | Dzyadukh, Stanislav M | Томский государственный университет Радиофизический факультет Кафедра квантовой электроники и фотоники | Томский государственный университет Сибирский физико-технический институт Научные подразделения СФТИ. Source: СВЧ-техника и телекоммуникационные технологии : 25-я Международная Крымская конференция (КрыМиКо'2015), 6-12 сентября 2015 г., Севастополь, Крым, Россия : материалы конференции : в 2 т. Т. 2Material type: Article; Format:
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Other title: Вольт-фарадные характеристики CdHgTe МДП-структур с одиночными квантовыми ямами на основе HgTe.Online access: Click here to access online Availability: No items available :
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Peculiarities of the external photoelectric effect in narrow-band semiconductors caused by soft X-ray radiation V. G. Sredin, R. Ramakoti, O. B. Ananin [et al.] by Sredin, Victor G | Ramakoti, Ravi S | Ananin, Oleg B | Voytsekhovskiy, Alexander V | Melekhov, Andrey P. Source: 2020 7th International Congress on energy fluxes and radiation effects (EFRE 2020), Tomsk, Russia, September 14 – 26, 2020 : proceedingsMaterial type: Article; Format:
electronic
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Ge/Si elongated quantum dots formation modelling with respect to the energy of edges A. P. Kokhanenko, K. A. Lozovoy, A. V. Voitsekhovskii by Kokhanenko, Andrey P | Lozovoy, Kirill A | Voytsekhovskiy, Alexander V | Томский государственный университет Радиофизический факультет Кафедра квантовой электроники и фотоники | Томский государственный университет Радиофизический факультет Научные подразделения РФФ | Томский государственный университет Сибирский физико-технический институт Научные подразделения СФТИ. Source: СВЧ-техника и телекоммуникационные технологии : 25-я Международная Крымская конференция (КрыМиКо'2015), 6-12 сентября 2015 г., Севастополь, Крым, Россия : материалы конференции : в 2 т. Т. 2Material type: Article; Format:
electronic
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Comparison of background donor concentration in HgCdTe grown with different technologies A. Y. Bonchyk, I. A. Mohylyak, H. V. Savytskyy [et.al.] by Bonchyk, A. Yu | Savytskyy, Hrygory V | Fitsych, Olena I | Voytsekhovskiy, Alexander V | Izhnin, Igor I | Mohylyak, I. A. Source: XV International conference on physics and technology of thin films and nanosystems, Ivanо-Frankivsk, May, 11-16, 2015 : book of abstractsMaterial type: Article; Format:
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Investigation of Si/Ge p-i-n structures with Ge quantum dots by admittance spectroscopy methods A. A. Pishchagin, K. A. Lozovoy, V. Y. Serokhvostov [et.al.] by Pishchagin, Anton A | Serokhvostov, V. Yu | Kokhanenko, Andrey P | Voytsekhovskiy, Alexander V | Nikiforov, Alexander I | Lozovoy, Kirill A. Source: Actual problems of radiophysics : proceedings of the VI International cоnfеrеnсе "APR-2015", October, 5-10, 2015, Tomsk, RussiaMaterial type: Article; Format:
electronic
available online
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11.
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Modification of electrophysical parameters of HgCdTe epitaxial heterostructures under the action of a pulsed nanosecond discharge in gas environment at atmospheric-pressure D. V. Grigoryev, A. V. Voytsekhovskii, V. F. Tarasenko [et.al.] by Grigoryev, Denis V | Tarasenko, Viktor Fedotovich | Shulepov, Mikhail A | Erofeev, Mikhail V | Ripenko, Vasilii S | Dvoretsky, Sergei A | Voytsekhovskiy, Alexander V. Source: Pulsed lasers and laser applications AMPL-2017 : the 13 International conference, September 10-15, 2017, Tomsk, Russia : abstractsMaterial type: Article; Format:
electronic
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12.
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Electrical properties of the V-defects of epitaxial HgCdTe V. A. Novikov, D. V. Grigoryev, D. A. Bezrodnyy [et.al.] by Novikov, Vadim A | Bezrodnyy, Dmitriy A | Voytsekhovskiy, Alexander V | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Yakushev, Maxim V | Grigoryev, Denis V. Source: 17th International Conference on II-VI Compounds and Related Materials, Paris, 13-18 September 2015 : conference bookMaterial type: Article; Format:
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Investigation of the effect of soft X-ray radiation on the electrophysical characteristics of epitaxial layers n-Hg1-xCdxTe A. V. Voytsekhovskiy, V. G. Sredin, O. B. Anan'in [et al.] by Sredin, Victor G | Ananin, Oleg B | Melekhov, Andrey P | Nesmelov, Sergey N | Dzyadukh, Stanislav M | Yurchak, V. A | Voytsekhovskiy, Alexander V. Source: 6th International congress on energy fluxes and radiation effects (EFRE 2018), September 16-22, 2018, Tomsk, Russia : abstractsMaterial type: Article; Format:
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14.
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Single element 2D materials and methods of their epitaxial synthesis I. I. Izhnin, A. V. Voytsekhovskiy, A. P. Kokhanenko [et al.] by Izhnin, Igor I | Voytsekhovskiy, Alexander V | Kokhanenko, Andrey P | Lozovoy, Kirill A | Dirko, Vladimir V | Vinarskiy, Vladimir P | Fitsych, Olena I. Source: International research and practice conference "Nanotechnology and nanomaterials" (NANO-2021), 25-27 August 2021, Lviv, Ukraine : abstract bookMaterial type: Article; Format:
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Investigation of admittance for CdHgTe-based MIS-structures with single quantum wells under the wide temperature range (8-200) K A. V. Voitsekhovskii, S. N. Nesmelov, S. M. Dzyadukh, D. I. Gorn by Voytsekhovskiy, Alexander V | Dzyadukh, Stanislav M | Gorn, Dmitriy Igorevich | Nesmelov, Sergey N | Томский государственный университет Радиофизический факультет Кафедра квантовой электроники и фотоники | Томский государственный университет Сибирский физико-технический институт Научные подразделения СФТИ | Томский государственный университет Научное управление Лаборатории НУ. Source: СВЧ-техника и телекоммуникационные технологии : 25-я Международная Крымская конференция (КрыМиКо'2015), 6-12 сентября 2015 г., Севастополь, Крым, Россия : материалы конференции : в 2 т. Т. 2Material type: Article; Format:
electronic
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Single-photon avalanche diode detectors based on group IV nanostructures I. I. Izhnin, A. V. Voytsekhovskiy, A. P. Kokhanenko [et al.] by Izhnin, Igor I | Voytsekhovskiy, Alexander V | Kokhanenko, Andrey P | Lozovoy, Kirill A | Douhan, Rahaf M. H | Dirko, Vladimir V | Fitsych, Olena I. Source: International research and practice conference "Nanotechnology and nanomaterials" (NANO-2020), 26-29 August 2020, Lviv, Ukraine : abstract bookMaterial type: Article; Format:
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Influence of plasma volume discharge in atmospheric-pressure air on the admittance of MIS structures based on MBE p-HgCdTe A. V. Voytsekhovskii, S. N. Nesmelov, S. M. Dzyadukh [et.al.] by Voytsekhovskiy, Alexander V | Dzyadukh, Stanislav M | Grigoryev, Denis V | Tarasenko, Viktor Fedotovich | Shulepov, Mikhail A | Nesmelov, Sergey N | Томский государственный университет Сибирский физико-технический институт Научные подразделения СФТИ | Томский государственный университет Радиофизический факультет Кафедра квантовой электроники и фотоники. Source: 12th International Conference "Gas Discharge Plasmas and Their Applications" GDP 2015, September 6-11, 2015, Tomsk, Russia : AbstractsMaterial type: Article; Format:
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Admittance of HgCdTe MIS structures with HgTe single quantum well I. I. Izhnin, E. I. Fitsych, S. N. Nesmelov [et.al.] by Izhnin, Igor I | Nesmelov, Sergey N | Dzyadukh, Stanislav M | Voytsekhovskiy, Alexander V | Gorn, Dmitriy Igorevich | Fitsych, Olena I | Томский государственный университет Радиофизический факультет Кафедра квантовой электроники и фотоники | Томский государственный университет Сибирский физико-технический институт Научные подразделения СФТИ. Source: The International research and practice Conference “Nanotechnology and Nanomaterials” (NANO-2015) : abstracts book of participants of the International Summer School and International research and practice Conference, 26-29 August 2015Material type: Article; Format:
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Changes in the electro-physical propertyies of MCT epitaxial films affected by a plasma volume discharge induced by an avalache beam in atmospheric-pressure air D. V. Grigoryev, A. V. Voytsekhovskii, K. A. Lozovoy [et.al.] by Grigoryev, Denis V | Lozovoy, Kirill A | Tarasenko, Viktor Fedotovich | Shulepov, Mikhail A | Voytsekhovskiy, Alexander V | Томский государственный университет Радиофизический факультет Кафедра квантовой электроники и фотоники | Томский государственный университет Сибирский физико-технический институт Научные подразделения СФТИ | Томский государственный университет Радиофизический факультет Публикации студентов и аспирантов РФФ. Source: 12th International Conference "Gas Discharge Plasmas and Their Applications" GDP 2015, September 6-11, 2015, Tomsk, Russia : AbstractsMaterial type: Article; Format:
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20.
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Electrical properties of optimized nBn structures based on HgCdTe grown by molecular beam epitaxy I. I. Izhnin, A. V. Voytsekhovskiy, S. N. Nesmelov [et al.] by Izhnin, Igor I | Voytsekhovskiy, Alexander V | Nesmelov, Sergey N | Dzyadukh, Stanislav M | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Sidorov, Georgiy Yu | Yakushev, Maxim V. Source: International research and practice conference "Nanotechnology and nanomaterials" (NANO-2021), 25-27 August 2021, Lviv, Ukraine : abstract bookMaterial type: Article; Format:
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21.
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Admittance of barrier nanostructures based on MBE HgCdTe I. I. Izhnin, A. V. Voytsekhovskiy, S. N. Nesmelov [et al.] by Izhnin, Igor I | Voytsekhovskiy, Alexander V | Nesmelov, Sergey N | Dzyadukh, Stanislav M | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Sidorov, Georgiy Yu | Kurbanov, Kurban R. Source: International research and practice conference "Nanotechnology and nanomaterials" (NANO-2020), 26-29 August 2020, Lviv, Ukraine : abstract bookMaterial type: Article; Format:
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22.
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The relaxation of electrophysical properties of MCT epitaxial films after influence of a high frequency nanosecond volume discharge in atmospheric pressure air P. A. Ermachenkov, D. V. Grigoryev, A. V. Voytsekhovskiy [et al.] by Grigoryev, Denis V | Voytsekhovskiy, Alexander V | Tarasenko, Viktor Fedotovich | Ripenko, Vasilii S | Shulepov, Mikhail A | Erofeev, Mikhail V | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Ermachenkov, P. A. Source: 6th International congress on energy fluxes and radiation effects (EFRE 2018), September 16-22, 2018, Tomsk, Russia : abstractsMaterial type: Article; Format:
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23.
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Distribution profiles of radiation donor defects in arsenic-implanted HgCdTe films A. V. Voytsekhovskiy, I. I. Izhnin, I. I. Syvorotka [et al.] by Izhnin, Igor I | Syvorotka, I. I | Korotaev, Alexander G | Mynbaev, Karim D | Varavin, Vasilii S | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Remesnik, V. G | Yakushev, Maxim V | Voytsekhovskiy, Alexander V. Source: 6th International congress on energy fluxes and radiation effects (EFRE 2018), September 16-22, 2018, Tomsk, Russia : abstractsMaterial type: Article; Format:
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24.
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Unipolar barrier structures based on HgCdTe for infrared detection A. V. Voytsekhovskiy, S. N. Nesmelov, S. M. Dzyadukh [et al.] by Voytsekhovskiy, Alexander V | Nesmelov, Sergey N | Dzyadukh, Stanislav M | Gorn, Dmitriy Igorevich | Kashirskii, Danila E | Lozovoy, Kirill A | Dirko, Vladimir V | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Sidorov, Georgiy Yu. Source: Pulsed lasers and laser applications AMPL-2021 : the 15th International conference, September 12-17, 2021, Tomsk, Russia : abstractsMaterial type: Article; Format:
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25.
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Defect study in molecular beam epitaxy-grown HgCdTe films with activated and unactivated arsenic I. I. Izhnin, S. A. Dvoretsky, K. D. Mynbaev [et.al.] by Dvoretsky, Sergei A | Mynbaev, Karim D | Fitsych, Olena I | Mikhailov, Nikolay N | Varavin, Vasilii S | Pociask-Bialy, Malgorzata | Voytsekhovskiy, Alexander V | Sheregii, E | Izhnin, Igor I | Томский государственный университет Радиофизический факультет Кафедра квантовой электроники и фотоники. Source: Journal of applied physicsMaterial type: Article; Format:
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26.
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Accumulation and annealing of radiation donor defects in arsenic-implanted Hg0.7Cd0.3Te films A. V. Voytsekhovskiy, A. G. Korotaev, I. I. Izhnin [et al.] by Voytsekhovskiy, Alexander V | Korotaev, Alexander G | Izhnin, Igor I | Mynbaev, Karim D | Yakushev, Maxim V | Mikhailov, Nikolay N | Varavin, Vasilii S | Dvoretsky, Sergei A | Marin, Denis V | Fitsych, Olena I | Kurbanov, Kurban R. Source: 2020 7th International Congress on energy fluxes and radiation effects (EFRE 2020), Tomsk, Russia, September 14 – 26, 2020 : proceedingsMaterial type: Article; Format:
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27.
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Fluence dependence of nanosize defect layers in arsenic implanted HgCdTe epitaxial films studied with TEM/HRTEM I. I. Izhnin, K. D. Mynbaev, Z. Swiatek [et al.] by Izhnin, Igor I | Mynbaev, Karim D | Świątek, Zbigniew | Morgiel, Jerzy | Korotaev, Alexander G | Voytsekhovskiy, Alexander V | Fitsych, Olena I | Varavin, Vasilii S | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Yakushev, Maxim V | Bonchyk, A. Yu | Savytskyy, Hrygory V. Source: International research and practice conference "Nanotechnology and nanomaterials" (NANO-2021), 25-27 August 2021, Lviv, Ukraine : abstract bookMaterial type: Article; Format:
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28.
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Nanosize radiation defects in arsenic implanted HgCdTe epitaxial films of n- and p-type studied with TEM/HRTEM I. I. Izhnin, K. D. Mynbaev, Z. Swiatek [et al.] by Izhnin, Igor I | Mynbaev, Karim D | Świątek, Zbigniew | Morgiel, Jerzy | Korotaev, Alexander G | Voytsekhovskiy, Alexander V | Fitsych, Olena I | Varavin, Vasilii S | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Yakushev, Maxim V | Bonchyk, A. Yu | Savytskyy, Hrygory V. Source: International research and practice conference "Nanotechnology and nanomaterials" (NANO-2020), 26-29 August 2020, Lviv, Ukraine : abstract bookMaterial type: Article; Format:
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