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  • Your search returned 148 results.

    51.
    Molecular dynamics simulations of the growth of Ge on Si Y. Zhoua, A. Lloyd, R. Smith [et al.]

    by Lloyd, Adam | Smith, Roger | Lozovoy, Kirill A | Voytsekhovskiy, Alexander V | Kokhanenko, Andrey P | Zhoua, Ying.

    Source: Surface scienceMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    52.
    Interaction between islands in kinetic models of epitaxial growth of quantum dots I. I. Izhnin, O. I. Fitsych, A. V. Voitsekhovskii [et al.]

    by Izhnin, Igor I | Fitsych, Olena I | Voytsekhovskiy, Alexander V | Kokhanenko, Andrey P | Lozovoy, Kirill A | Dirko, Vladimir V.

    Source: Applied nanoscienceMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    53.
    Electrical properties of the V-defects of epitaxial HgCdTe V. A. Novikov, D. V. Grigoryev, D. A. Bezrodnyy [et.al.]

    by Novikov, Vadim A | Bezrodnyy, Dmitriy A | Voytsekhovskiy, Alexander V | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Grigoryev, Denis V.

    Source: Journal of electronic materialsMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    54.
    Investigation of Si/Ge p-i-n structures with Ge quantum dots by admittance spectroscopy methods A. A. Pishchagin, K. A. Lozovoy, V. Y. Serokhvostov [et.al.]

    by Pishchagin, Anton A | Serokhvostov, V. Yu | Kokhanenko, Andrey P | Voytsekhovskiy, Alexander V | Nikiforov, Alexander I | Lozovoy, Kirill A.

    Source: Actual problems of radiophysics : proceedings of the VI International cоnfеrеnсе "APR-2015", October, 5-10, 2015, Tomsk, RussiaMaterial type: Article Article; Format: electronic available online remote; Literary form: Not fiction ; Audience: Specialized; Online access: Click here to access online Availability: No items available :
    55.
    Differential conductance and capacity-voltage characteristics of MIS structures with single quantum wells based on HgTe D. I. Gorn, A. V. Voitsekhovskii, S. M. Dzyadukh, S. N. Nesmelov

    by Gorn, Dmitriy Igorevich | Dzyadukh, Stanislav M | Nesmelov, Sergey N | Voytsekhovskiy, Alexander V | Томский государственный университет Радиофизический факультет Кафедра квантовой электроники и фотоники | Томский государственный университет Сибирский физико-технический институт Научные подразделения СФТИ.

    Source: International Journal of NanotechnologyMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    56.
    Admittance of organic LED structures with an emission YAK-203 layer A. V. Voytsekhovskii, S. N. Nesmelov, S. M. Dzyadukh [et al.]

    by Nesmelov, Sergey N | Dzyadukh, Stanislav M | Kopylova, Tatyana N | Degtyarenko, Konstantin M | Kokhanenko, Andrey P | Voytsekhovskiy, Alexander V.

    Source: Russian physics journalMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    57.
    Spectral characteristics of Si:Ge and Hg1–xCdхTe heterostructures A. V. Yatskiy, K. A. Lozovoy, A. P. Kokhanenko, A. V. Voytsekhovskiy

    by Lozovoy, Kirill A | Kokhanenko, Andrey P | Voytsekhovskiy, Alexander V | Yatskiy, Alexey V | Томский государственный университет Радиофизический факультет Публикации студентов и аспирантов РФФ | Томский государственный университет Радиофизический факультет Кафедра квантовой электроники и фотоники.

    Source: Известия высших учебных заведений. ФизикаMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    58.
    Unipolar semiconductor barrier structures for infrared photodetector arrays (Review) I. D. Burlakov, N. A. Kulchitskii, A. V. Voytsekhovskiy [et al.]

    by Burlakov, I. D | Kulchitskii, N. A | Voytsekhovskiy, Alexander V | Nesmelov, Sergey N | Dzyadukh, Stanislav M | Gorn, Dmitriy Igorevich.

    Source: Journal of communications technology and electronicsMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    59.
    Nanostructures with Ge-Si quantum dots for infrared photodetectors I. I. Izhnin, O. I. Fitsych, A. V. Voitsekhovskii [et al.]

    by Fitsych, Olena I | Voytsekhovskiy, Alexander V | Kokhanenko, Andrey P | Lozovoy, Kirill A | Dirko, Vladimir V | Izhnin, Igor I.

    Source: Opto-electronics reviewMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    60.
    Ion etching of HgCdTe: Properties, patterns and use as a method for defect studies I. I. Izhnin, K. D. Mynbaev, A. V. Voitsekhovskii [et.al.]

    by Izhnin, Igor I | Voytsekhovskiy, Alexander V | Korotaev, Alexander G | Fitsych, Olena I | Pociask-Bialy, Malgorzata | Mynbaev, Karim D.

    Source: Opto-electronics reviewMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    61.
    Admittance spectroscopy of Ge/Si p-i-n structures with Ge quantum dots A. A. Pishchagin, A. V. Voytsekhovskiy, A. P. Kokhanenko [et.al.]

    by Pishchagin, Anton A | Kokhanenko, Andrey P | Serokhvostov, V. Yu | Dzyadukh, Stanislav M | Nikiforov, Alexander I | Voytsekhovskiy, Alexander V.

    Source: Journal of Physics: Conference SeriesMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    62.
    Peculiarities of the 7 × 7 to 5 × 5 superstructure transition during epitaxial growth of germanium on silicon (111) surface V. V. Dirko, K. A. Lozovoy, A. P. Kokhanenko [et al.]

    by Dirko, Vladimir V | Lozovoy, Kirill A | Kokhanenko, Andrey P | Kukenov, Olzhas I | Korotaev, Alexander G | Voytsekhovskiy, Alexander V.

    Source: NanomaterialsMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    63.
    Two-dimensional materials of group IVA: Latest advances in epitaxial methods of growth K. A. Lozovoy, V. V. Dirko, V. P. Vinarskiy [et al.]

    by Lozovoy, Kirill A | Dirko, Vladimir V | Vinarskiy, Vladimir P | Kokhanenko, Andrey P | Voytsekhovskiy, Alexander V | Akimenko, Nataliya Yu.

    Source: Russian physics journalMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    64.
    Modification of electrophysical parameters of HgCdTe epitaxial heterostructures under the action of a pulsed nanosecond discharge in gas environment at atmospheric-pressure D. V. Grigoryev, A. V. Voytsekhovskii, V. F. Tarasenko [et.al.]

    by Grigoryev, Denis V | Tarasenko, Viktor Fedotovich | Shulepov, Mikhail A | Erofeev, Mikhail V | Ripenko, Vasilii S | Dvoretsky, Sergei A | Voytsekhovskiy, Alexander V.

    Source: Pulsed lasers and laser applications AMPL-2017 : the 13 International conference, September 10-15, 2017, Tomsk, Russia : abstractsMaterial type: Article Article; Format: electronic available online remote; Literary form: Not fiction ; Audience: Specialized; Online access: Click here to access online Availability: No items available :
    65.
    Admittance dependences of the mid-wave infrared barrier structure based on HgCdTe grown by molecular beam epitaxy A. V. Voytsekhovskii, S. N. Nesmelov, S. M. Dzyadukh [et al.]

    by Nesmelov, Sergey N | Dzyadukh, Stanislav M | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Sidorov, Georgiy Yu | Yakushev, Maxim V | Voytsekhovskiy, Alexander V.

    Source: Materials research expressMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    66.
    Capacitive properties of metal-insulator-semiconductor systems based on an HgCdTe nBn structure grown by molecular beam epitaxy A. V. Voytsekhovskiy, S. N. Nesmelov, S. M. Dzyadukh [et al.]

    by Nesmelov, Sergey N | Dzyadukh, Stanislav M | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Sidorov, Georgiy Yu | Yakushev, Maxim V | Voytsekhovskiy, Alexander V.

    Source: Journal of communications technology and electronicsMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    67.
    Electrical properties of the V-defects of epitaxial HgCdTe V. A. Novikov, D. V. Grigoryev, D. A. Bezrodnyy [et.al.]

    by Novikov, Vadim A | Bezrodnyy, Dmitriy A | Voytsekhovskiy, Alexander V | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Yakushev, Maxim V | Grigoryev, Denis V.

    Source: 17th International Conference on II-VI Compounds and Related Materials, Paris, 13-18 September 2015 : conference bookMaterial type: Article Article; Format: electronic available online remote; Literary form: Not fiction ; Audience: Specialized; Online access: Click here to access online Availability: No items available :
    68.
    Experimental study of NBνN barrier structures based on MBE n-HgCdTe for MWIR and LWIR photodetectors A. V. Voytsekhovskii, S. M. Dzyadukh, D. I. Gorn [et al.]

    by Voytsekhovskiy, Alexander V | Dzyadukh, Stanislav M | Gorn, Dmitriy Igorevich | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Sidorov, Georgiy Yu | Yakushev, Maxim V.

    Source: Journal of communications technology and electronicsMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    69.
    Admittance investigation of MIS structures with GgTe-based single quantum wells I. I. Izhnin, S. N. Nesmelov, S. M. Dzyadukh [et.al.]

    by Izhnin, Igor I | Dzyadukh, Stanislav M | Voytsekhovskiy, Alexander V | Gorn, Dmitriy Igorevich | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Nesmelov, Sergey N.

    Source: Nanoscale research lettersMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    70.
    Investigation of the effect of soft X-ray radiation on the electrophysical characteristics of epitaxial layers n-Hg1-xCdxTe A. V. Voytsekhovskiy, V. G. Sredin, O. B. Anan'in [et al.]

    by Sredin, Victor G | Ananin, Oleg B | Melekhov, Andrey P | Nesmelov, Sergey N | Dzyadukh, Stanislav M | Yurchak, V. A | Voytsekhovskiy, Alexander V.

    Source: 6th International congress on energy fluxes and radiation effects (EFRE 2018), September 16-22, 2018, Tomsk, Russia : abstractsMaterial type: Article Article; Format: electronic available online remote; Literary form: Not fiction ; Audience: Specialized; Online access: Click here to access online Availability: No items available :
    71.
    Admittance of metal-insulator-semiconductor devices based on HgCdTe nBn structures A. V. Voytsekhovskii, S. N. Nesmelov, S. M. Dzyadukh [et al.]

    by Nesmelov, Sergey N | Dzyadukh, Stanislav M | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Sidorov, Georgiy Yu | Yakushev, Maxim V | Voytsekhovskiy, Alexander V.

    Source: Semiconductor science and technologyMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    72.
    An experimental study of the dynamic resistance in surface leakage limited nBn structures based on HgCdTe grown by molecular beam epitaxy A. V. Voytsekhovskiy, S. N. Nesmelov, S. M. Dzyadukh [et al.]

    by Voytsekhovskiy, Alexander V | Nesmelov, Sergey N | Dzyadukh, Stanislav M | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Sidorov, Georgiy Yu | Yakushev, Maxim V.

    Source: Journal of electronic materialsMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    73.
    Comprehensive experimental study of NBνN barrier structures based on n-HgCdTe MBE for detection in MWIR and LWIR spectra A. V. Voytsekhovskii, S. M. Dzyadukh, D. I. Gorn [et al.]

    by Voytsekhovskiy, Alexander V | Dzyadukh, Stanislav M | Gorn, Dmitriy Igorevich | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Sidorov, Georgiy Yu | Yakushev, Maxim V.

    Source: Physica scriptaMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    74.
    Diffusion limitation of dark current in the nBn structures based on the MBE HgCdTe A. V. Voytsekhovskiy, S. N. Nesmelov, S. M. Dzyadukh [et al.]

    by Voytsekhovskiy, Alexander V | Nesmelov, Sergey N | Dzyadukh, Stanislav M | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Sidorov, Georgiy Yu | Yakushev, Maxim V.

    Source: Journal of communications technology and electronicsMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    75.
    Temperature spectra of conductance of Ge/ Si p-i-n structures with Ge quantum dots I. I. Izhnin, O. I. Fitsych, A. A. Pishchagin [et.al.]

    by Izhnin, Igor I | Pishchagin, Anton A | Kokhanenko, Andrey P | Voytsekhovskiy, Alexander V | Dzyadukh, Stanislav M | Nikiforov, Alexander I | Fitsych, Olena I.

    Source: Nanoscale research lettersMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    76.
    Electrical properties of nBn structures based on HgCdTe grown by molecular beam epitaxy on GaAs substrates A. V. Voytsekhovskiy, S. N. Nesmelov, S. M. Dzyadukh и др.

    by Nesmelov, Sergey N | Dzyadukh, Stanislav M | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Sidorov, Georgiy Yu | Yakushev, Maxim V | Voytsekhovskiy, Alexander V.

    Source: Infrared physics and technologyMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    77.
    Photodetectors and solar cells with GeSi quantum dots parameters dependence on growth conditions K. A. Lozovoy, A. V. Voitsekhovskii, A. P. Kokhanenko, V. G. Satdarov

    by Lozovoy, Kirill A | Kokhanenko, Andrey P | Satdarov, Vadim G | Voytsekhovskiy, Alexander V | Томский государственный университет Сибирский физико-технический институт Научные подразделения СФТИ | Томский государственный университет Радиофизический факультет Кафедра квантовой электроники и фотоники | Томский государственный университет Радиофизический факультет Научные подразделения РФФ.

    Source: International Journal of NanotechnologyMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    78.
    Investigation of GeSi quantum dot structures using the methods of admittance spectroscopy V. G. Satdarov, A. V. Voitsekhovskii, A. P. Kokhanenko, K. A. Lozovoy

    by Satdarov, Vadim G | Kokhanenko, Andrey P | Lozovoy, Kirill A | Voytsekhovskiy, Alexander V | Томский государственный университет Сибирский физико-технический институт Научные подразделения СФТИ | Томский государственный университет Радиофизический факультет Кафедра квантовой электроники и фотоники | Томский государственный университет Радиофизический факультет Публикации студентов и аспирантов РФФ.

    Source: International Journal of NanotechnologyMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    79.
    Investigation of admittance for CdHgTe-based MIS-structures with single quantum wells under the wide temperature range (8-200) K A. V. Voitsekhovskii, S. N. Nesmelov, S. M. Dzyadukh, D. I. Gorn

    by Voytsekhovskiy, Alexander V | Dzyadukh, Stanislav M | Gorn, Dmitriy Igorevich | Nesmelov, Sergey N | Томский государственный университет Радиофизический факультет Кафедра квантовой электроники и фотоники | Томский государственный университет Сибирский физико-технический институт Научные подразделения СФТИ | Томский государственный университет Научное управление Лаборатории НУ.

    Source: СВЧ-техника и телекоммуникационные технологии : 25-я Международная Крымская конференция (КрыМиКо'2015), 6-12 сентября 2015 г., Севастополь, Крым, Россия : материалы конференции : в 2 т. Т. 2Material type: Article Article; Format: electronic available online remote; Literary form: Not fiction ; Audience: Specialized; Online access: Click here to access online Availability: No items available :
    80.
    Controlling of Ge quantum dots arrays parameters in Ge/Si nanoheterostructures grown by molecular beam epitaxy method V. G. Satdarov, A. V. Voytsekhovskiy, A. P. Kokhanenko [et.al.]

    by Voytsekhovskiy, Alexander V | Kokhanenko, Andrey P | Lozovoy, Kirill A | Kalin, Eugeniy A | Satdarov, Vadim G | Томский государственный университет Радиофизический факультет Публикации студентов и аспирантов РФФ | Томский государственный университет Радиофизический факультет Кафедра квантовой электроники и фотоники.

    Source: Известия высших учебных заведений. ФизикаMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    81.
    Dark currents of unipolar barrier structures based on mercury cadmium telluride for long-wave IR detectors A. V. Voytsekhovskiy, S. N. Nesmelov, S. M. Dzyadukh [et al.]

    by Voytsekhovskiy, Alexander V | Nesmelov, Sergey N | Dzyadukh, Stanislav M | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Sidorov, Georgiy Yu | Yakushev, Maxim V.

    Source: Russian physics journalMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    82.
    Admittance of MIS structures based on nBn systems of epitaxial HgCdTe for detection in the 3–5 μm spectral range A. V. Voytsekhovskiy, S. N. Nesmelov, S. M. Dzyadukh [et al.]

    by Voytsekhovskiy, Alexander V | Nesmelov, Sergey N | Dzyadukh, Stanislav M | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Sidorov, Georgiy Yu | Yakushev, Maxim V.

    Source: Technical physics lettersMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    83.
    Single-photon avalanche diode detectors based on group IV nanostructures I. I. Izhnin, A. V. Voytsekhovskiy, A. P. Kokhanenko [et al.]

    by Izhnin, Igor I | Voytsekhovskiy, Alexander V | Kokhanenko, Andrey P | Lozovoy, Kirill A | Douhan, Rahaf M. H | Dirko, Vladimir V | Fitsych, Olena I.

    Source: International research and practice conference "Nanotechnology and nanomaterials" (NANO-2020), 26-29 August 2020, Lviv, Ukraine : abstract bookMaterial type: Article Article; Format: electronic available online remote; Literary form: Not fiction ; Audience: Specialized; Online access: Click here to access online Availability: No items available :
    84.
    Electrical properties of n‑HgCdTe MIS structures with HgTe single quantum wells I. I. Izhnin, I. I. Syvorotka, A. V. Voytsekhovskiy [et al.]

    by Syvorotka, I. I | Voytsekhovskiy, Alexander V | Nesmelov, Sergey N | Dzyadukh, Stanislav M | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Izhnin, Igor I.

    Source: Applied nanoscienceMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    85.
    Generation of surface defects in epitaxial CdxHg1-xTe layers by soft X-ray radiation of laser plasma V. G. Sredin, A. V. Voytsekhovskiy, O. B. Anan'in [et al.]

    by Voytsekhovskiy, Alexander V | Ananin, Oleg B | Izhnin, Igor I | Melekhov, Andrey P | Nesmelov, Sergey N | Dzyadukh, Stanislav M | Sredin, Victor G.

    Source: Russian physics journalMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    86.
    Comparative analysis of pyramidal and wedge-like quantum dots formation kinetics in Ge/Si(001) system K. A. Lozovoy, A. V. Voytsekhovskiy, A. P. Kokhanenko, V. G. Satdarov

    by Voytsekhovskiy, Alexander V | Kokhanenko, Andrey P | Satdarov, Vadim G | Lozovoy, Kirill A | Томский государственный университет Радиофизический факультет Публикации студентов и аспирантов РФФ | Томский государственный университет Радиофизический факультет Кафедра квантовой электроники и фотоники | Томский государственный университет Сибирский физико-технический институт Научные подразделения СФТИ.

    Source: Surface scienceMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    87.
    Admittance of barrier structures based on mercury cadmium telluride A. V. Voytsekhovskiy, S. N. Nesmelov, S. M. Dzyadukh [et al.]

    by Nesmelov, Sergey N | Dzyadukh, Stanislav M | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Sidorov, Georgiy Yu | Yakushev, Maxim V | Voytsekhovskiy, Alexander V.

    Source: Russian physics journalMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    88.
    Single element 2D materials and methods of their epitaxial synthesis I. I. Izhnin, A. V. Voytsekhovskiy, A. P. Kokhanenko [et al.]

    by Izhnin, Igor I | Voytsekhovskiy, Alexander V | Kokhanenko, Andrey P | Lozovoy, Kirill A | Dirko, Vladimir V | Vinarskiy, Vladimir P | Fitsych, Olena I.

    Source: International research and practice conference "Nanotechnology and nanomaterials" (NANO-2021), 25-27 August 2021, Lviv, Ukraine : abstract bookMaterial type: Article Article; Format: electronic available online remote; Literary form: Not fiction ; Audience: Specialized; Online access: Click here to access online Availability: No items available :
    89.
    Influence of plasma volume discharge in atmospheric-pressure air on the admittance of MIS structures based on MBE p-HgCdTe A. V. Voytsekhovskii, S. N. Nesmelov, S. M. Dzyadukh [et.al.]

    by Voytsekhovskiy, Alexander V | Dzyadukh, Stanislav M | Grigoryev, Denis V | Tarasenko, Viktor Fedotovich | Shulepov, Mikhail A | Nesmelov, Sergey N | Томский государственный университет Сибирский физико-технический институт Научные подразделения СФТИ | Томский государственный университет Радиофизический факультет Кафедра квантовой электроники и фотоники.

    Source: 12th International Conference "Gas Discharge Plasmas and Their Applications" GDP 2015, September 6-11, 2015, Tomsk, Russia : AbstractsMaterial type: Article Article; Format: electronic available online remote; Literary form: Not fiction ; Audience: Specialized; Online access: Click here to access online Availability: No items available :
    90.
    Admittance characterization of pentacene metal-insulator-semiconductor capacitors with SiO2 and SiO2/Ga2O3 insulators in temperature range of 9-300 K A. V. Voytsekhovskiy, S. N. Nesmelov, V. A. Novikov [et al.]

    by Nesmelov, Sergey N | Novikov, Vadim A | Dzyadukh, Stanislav M | Kopylova, Tatyana N | Ivonin, Ivan V | Degtyarenko, Konstantin M | Tereshchenko, Evgeny V | Voytsekhovskiy, Alexander V.

    Source: Thin solid filmsMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    91.
    Si/Ge-based photosensitive nanoheterostructures for optical communication systems K. A. Lozovoy, A. V. Voytsekhovskiy, A. P. Kokhanenko [et.al.]

    by Voytsekhovskiy, Alexander V | Kokhanenko, Andrey P | Turapin, Alexey M | Satdarov, Vadim G | Kalin, Eugeniy A | Lozovoy, Kirill A | Томский государственный университет Радиофизический факультет Публикации студентов и аспирантов РФФ | Томский государственный университет Радиофизический факультет Кафедра квантовой электроники и фотоники.

    Source: Известия высших учебных заведений. ФизикаMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    92.
    Ion implantation and ion milling in MBE Hg1-xCdxNe films O. I. Fitsych, A. V. Voitsekhovskii, D. V. Grigorjev [et.al.]

    by Voytsekhovskiy, Alexander V | Grigoryev, Denis V | Mikhailov, Nikolay N | Talipov, Niyaz Kh | Mynbaev, Karim D | Izhnin, Igor I | Fitsych, Olena I | Томский государственный университет Радиофизический факультет Кафедра квантовой электроники и фотоники.

    Source: Nuclear instruments and methods in physics research BMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    93.
    Single-element 2D materials beyond graphene: methods of epitaxial synthesis K. A. Lozovoy, I. I. Izhnin, A. P. Kokhanenko [et al.]

    by Lozovoy, Kirill A | Izhnin, Igor I | Kokhanenko, Andrey P | Dirko, Vladimir V | Vinarskiy, Vladimir P | Voytsekhovskiy, Alexander V | Fitsych, Olena I | Akimenko, Nataliya Yu.

    Source: NanomaterialsMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    94.
    Electrical characterization of insulator-semiconductor systems based on graded band gap MBE HgCdTe with atomic layer deposited Al2O3 films for infrared detector passivation A. V. Voytsekhovskiy, S. N. Nesmelov, S. M. Dzyadukh [et al.]

    by Nesmelov, Sergey N | Dzyadukh, Stanislav M | Varavin, Vasilii S | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Yakushev, Maxim V | Sidorov, Georgiy Yu | Voytsekhovskiy, Alexander V.

    Source: VacuumMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    95.
    Electrophysical characteristics of the pentacene-based MIS structures with a SiO2 insulator V. A. Novikov, A. V. Voytsekhovskiy, S. N. Nesmelov [et al.]

    by Voytsekhovskiy, Alexander V | Nesmelov, Sergey N | Dzyadukh, Stanislav M | Kopylova, Tatyana N | Degtyarenko, Konstantin M | Chernikov, Evgeniy V | Kalygina, Vera M | Novikov, Vadim A.

    Source: Russian physics journalMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    96.
    Changes in the electro-physical propertyies of MCT epitaxial films affected by a plasma volume discharge induced by an avalache beam in atmospheric-pressure air D. V. Grigoryev, A. V. Voytsekhovskii, K. A. Lozovoy [et.al.]

    by Grigoryev, Denis V | Lozovoy, Kirill A | Tarasenko, Viktor Fedotovich | Shulepov, Mikhail A | Voytsekhovskiy, Alexander V | Томский государственный университет Радиофизический факультет Кафедра квантовой электроники и фотоники | Томский государственный университет Сибирский физико-технический институт Научные подразделения СФТИ | Томский государственный университет Радиофизический факультет Публикации студентов и аспирантов РФФ.

    Source: 12th International Conference "Gas Discharge Plasmas and Their Applications" GDP 2015, September 6-11, 2015, Tomsk, Russia : AbstractsMaterial type: Article Article; Format: electronic available online remote; Literary form: Not fiction ; Audience: Specialized; Online access: Click here to access online Availability: No items available :
    97.
    Electrical properties of optimized nBn structures based on HgCdTe grown by molecular beam epitaxy I. I. Izhnin, A. V. Voytsekhovskiy, S. N. Nesmelov [et al.]

    by Izhnin, Igor I | Voytsekhovskiy, Alexander V | Nesmelov, Sergey N | Dzyadukh, Stanislav M | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Sidorov, Georgiy Yu | Yakushev, Maxim V.

    Source: International research and practice conference "Nanotechnology and nanomaterials" (NANO-2021), 25-27 August 2021, Lviv, Ukraine : abstract bookMaterial type: Article Article; Format: electronic available online remote; Literary form: Not fiction ; Audience: Specialized; Online access: Click here to access online Availability: No items available :
    98.
    Admittance of barrier nanostructures based on MBE HgCdTe I. I. Izhnin, A. V. Voytsekhovskii, S. N. Nesmelov [et al.]

    by Izhnin, Igor I | Voytsekhovskiy, Alexander V | Nesmelov, Sergey N | Dzyadukh, Stanislav M | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Sidorov, Georgiy Yu | Yakushev, Maxim V.

    Source: Applied nanoscienceMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    99.
    Influence of pulsed nanosecond volume discharge in atmospheric-pressure air on the electrical characteristics of MCT epitaxial films D. V. Grigoryev, A. V. Voytsekhovskiy, K. A. Lozovoy [et.al.]

    by Grigoryev, Denis V | Lozovoy, Kirill A | Nesmelov, Sergey N | Dzyadukh, Stanislav M | Tarasenko, Viktor Fedotovich | Shulepov, Mikhail A | Dvoretsky, Sergei A | Voytsekhovskiy, Alexander V.

    Source: Proceedings of SPIEMaterial type: Article Article; Format: electronic available online remote Online access: Click here to access online Availability: No items available :
    100.
    Admittance of barrier nanostructures based on MBE HgCdTe I. I. Izhnin, A. V. Voytsekhovskiy, S. N. Nesmelov [et al.]

    by Izhnin, Igor I | Voytsekhovskiy, Alexander V | Nesmelov, Sergey N | Dzyadukh, Stanislav M | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Sidorov, Georgiy Yu | Kurbanov, Kurban R.

    Source: International research and practice conference "Nanotechnology and nanomaterials" (NANO-2020), 26-29 August 2020, Lviv, Ukraine : abstract bookMaterial type: Article Article; Format: electronic available online remote; Literary form: Not fiction ; Audience: Specialized; Online access: Click here to access online Availability: No items available :