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101.
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Admittance of HgCdTe MIS structures with HgTe single quantum well I. I. Izhnin, E. I. Fitsych, S. N. Nesmelov [et.al.] by Izhnin, Igor I | Nesmelov, Sergey N | Dzyadukh, Stanislav M | Voytsekhovskiy, Alexander V | Gorn, Dmitriy Igorevich | Fitsych, Olena I | Томский государственный университет Радиофизический факультет Кафедра квантовой электроники и фотоники | Томский государственный университет Сибирский физико-технический институт Научные подразделения СФТИ. Source: The International research and practice Conference “Nanotechnology and Nanomaterials” (NANO-2015) : abstracts book of participants of the International Summer School and International research and practice Conference, 26-29 August 2015Material type: Article; Format:
electronic
available online
; Literary form:
Not fiction
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Specialized;
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102.
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103.
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104.
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Admittance of MIS-structures based on HgCdTe with a double-layer CdTe/Al2O3 insulator S. M. Dzyadukh, A. V. Voitsekhovskii, S. N. Nesmelov [et al.] by Voytsekhovskiy, Alexander V | Nesmelov, Sergey N | Sidorov, Georgiy Yu | Varavin, Vasilii S | Vasilev, Vladimir V | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Yakushev, Maxim V | Dzyadukh, Stanislav M. Source: Russian physics journalMaterial type: Article; Format:
electronic
available online
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105.
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Impact of the graded-gap layer on the admittance of MIS structures based on MBE-grown n-Hg1-xCdxTe (x = 0.22-0.23) with the Al2O3 insulator A. V. Voytsekhovskiy, S. N. Nesmelov, S. M. Dzyadukh [et.al.] by Voytsekhovskiy, Alexander V | Dzyadukh, Stanislav M | Vasilev, Vladimir V | Varavin, Vasilii S | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Yakushev, Maxim V | Sidorov, Georgiy Yu | Nesmelov, Sergey N. Source: Journal of communications technology and electronicsMaterial type: Article; Format:
electronic
available online
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106.
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Admittance of MIS structures based on graded-gap MBE HgCdTe with Al2O3 insulator A. V. Voytsekhovskii, S. N. Nesmelov, S. M. Dzyadukh [et.al.] by Voytsekhovskiy, Alexander V | Dzyadukh, Stanislav M | Vasilev, Vladimir V | Varavin, Vasilii S | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Yakushev, Maxim V | Sidorov, Georgiy Yu | Nesmelov, Sergey N. Source: Physica status solidi CMaterial type: Article; Format:
electronic
available online
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107.
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Background donor concentration in HgCdTe I. I. Izhnin, K. D. Mynbaev, A. V. Voytsekhovskiy [et.al.] by Izhnin, Igor I | Voytsekhovskiy, Alexander V | Korotaev, Alexander G | Fitsych, Olena I | Pociask-Bialy, Malgorzata | Dvoretsky, Sergei A | Mynbaev, Karim D | Томский государственный университет Сибирский физико-технический институт Научные подразделения СФТИ | Томский государственный университет Радиофизический факультет Кафедра квантовой электроники и фотоники. Source: Opto-electronics reviewMaterial type: Article; Format:
electronic
available online
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108.
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Investigation of the differential resistance of MIS structures based on n-Hg0.78Cd0.22Te with near-surface graded-gap layers A. V. Voytsekhovskiy, N. A. Kulchitskii, S. N. Nesmelov [et al.] by Voytsekhovskiy, Alexander V | Kulchitskii, N. A | Nesmelov, Sergey N | Dzyadukh, Stanislav M | Varavin, Vasilii S | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Yakushev, Maxim V | Sidorov, Georgiy Yu. Source: Journal of communications technology and electronicsMaterial type: Article; Format:
electronic
available online
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109.
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Investigation of the effect of thermal annealing on the electrical properties of the near-surface layer of MBE n-HgCdTe using MIS techniques A. V. Voytsekhovskii, S. N. Nesmelov, S. M. Dzyadukh [et al.] by Nesmelov, Sergey N | Dzyadukh, Stanislav M | Varavin, Vasilii S | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Sidorov, Georgiy Yu | Yakushev, Maxim V | Marin, Denis V | Voytsekhovskiy, Alexander V. Source: Journal of electronic materialsMaterial type: Article; Format:
electronic
available online
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110.
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Single‑photon avalanche diode detectors based on group IV materials I. I. Izhnin, K. A. Lozovoy, A. P. Kokhanenko [et al.] by Izhnin, Igor I | Lozovoy, Kirill A | Kokhanenko, Andrey P | Khomyakova, Kristina I | Douhan, Rahaf M. H | Dirko, Vladimir V | Voytsekhovskiy, Alexander V | Fitsych, Olena I | Akimenko, Nataliya Yu. Source: Applied nanoscienceMaterial type: Article; Format:
electronic
available online
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111.
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Luminescence studies of HgCdTe‑ and InAsSb‑based quantum‑well structures I. I. Izhnin, A. I. Izhnin, O. I. Fitsych [et al.] by Izhnin, A. I | Fitsych, Olena I | Voytsekhovskiy, Alexander V | Gorn, Dmitriy Igorevich | Semakova, A. A | Bazhenov, N. L | Mynbaev, Karim D | Zegrya, G. G | Izhnin, Igor I. Source: Applied nanoscienceMaterial type: Article; Format:
electronic
available online
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112.
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The relaxation of electrophysical properties of MCT epitaxial films after influence of a high frequency nanosecond volume discharge in atmospheric pressure air P. A. Ermachenkov, D. V. Grigoryev, A. V. Voytsekhovskiy [et al.] by Grigoryev, Denis V | Voytsekhovskiy, Alexander V | Tarasenko, Viktor Fedotovich | Ripenko, Vasilii S | Shulepov, Mikhail A | Erofeev, Mikhail V | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Ermachenkov, P. A. Source: 6th International congress on energy fluxes and radiation effects (EFRE 2018), September 16-22, 2018, Tomsk, Russia : abstractsMaterial type: Article; Format:
electronic
available online
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Not fiction
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Specialized;
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113.
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114.
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The effect of As+ Ion implantation and annealing on the electrical properties of near-surface layers in graded-gap n-Hg0.78Cd0.22Te films A. V. Voytsekhovskiy, S. N. Nesmelov, S. M. Dzyadukh [et al.] by Voytsekhovskiy, Alexander V | Nesmelov, Sergey N | Dzyadukh, Stanislav M | Varavin, Vasilii S | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Sidorov, Georgiy Yu | Yakushev, Maxim V | Marin, Denis V. Source: Technical physics lettersMaterial type: Article; Format:
electronic
available online
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115.
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Influence of As+ Ion implantation on properties of MBE HgCdTe near-surface layer characterized by metal–insulator–semiconductor techniques A. V. Voytsekhovskiy, S. N. Nesmelov, S. M. Dzyadukh [et al.] by Voytsekhovskiy, Alexander V | Nesmelov, Sergey N | Dzyadukh, Stanislav M | Varavin, Vasilii S | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Sidorov, Georgiy Yu | Yakushev, Maxim V | Marin, Denis V. Source: Journal of electronic materialsMaterial type: Article; Format:
electronic
available online
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116.
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Admittance of metal-insulator-semiconductor structures based on graded-gap HgCdTe grown by molecular-beam epitaxy on GaAs substrates A. V. Voytsekhovskiy, S. N. Nesmelov, S. M. Dzyadukh [et.al.] by Voytsekhovskiy, Alexander V | Dzyadukh, Stanislav M | Vasilev, Vladimir V | Varavin, Vasilii S | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Yakushev, Maxim V | Nesmelov, Sergey N | Томский государственный университет Радиофизический факультет Кафедра квантовой электроники и фотоники | Томский государственный университет Сибирский физико-технический институт Научные подразделения СФТИ. Source: Infrared physics and technologyMaterial type: Article; Format:
electronic
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117.
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118.
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Defect study in molecular beam epitaxy-grown HgCdTe films with activated and unactivated arsenic I. I. Izhnin, S. A. Dvoretsky, K. D. Mynbaev [et.al.] by Dvoretsky, Sergei A | Mynbaev, Karim D | Fitsych, Olena I | Mikhailov, Nikolay N | Varavin, Vasilii S | Pociask-Bialy, Malgorzata | Voytsekhovskiy, Alexander V | Sheregii, E | Izhnin, Igor I | Томский государственный университет Радиофизический факультет Кафедра квантовой электроники и фотоники. Source: Journal of applied physicsMaterial type: Article; Format:
electronic
available online
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Specialized;
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119.
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Analysis of carrier species in arsenic-implanted p- and n-type Hg0.7Cd0.3Te I. I. Izhnin, K. D. Mynbaev, A. V. Voitsekhovskii [et al.] by Izhnin, Igor I | Mynbaev, Karim D | Voytsekhovskiy, Alexander V | Korotaev, Alexander G | Varavin, Vasilii S | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Yakushev, Maxim V | Fitsych, Olena I | Świątek, Zbigniew | Izhnin, Igor I. Source: Infrared physics and technologyMaterial type: Article; Format:
electronic
available online
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120.
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Distribution profiles of radiation donor defects in arsenic-implanted HgCdTe films A. V. Voytsekhovskiy, I. I. Izhnin, I. I. Syvorotka [et al.] by Izhnin, Igor I | Syvorotka, I. I | Korotaev, Alexander G | Mynbaev, Karim D | Varavin, Vasilii S | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Remesnik, V. G | Yakushev, Maxim V | Voytsekhovskiy, Alexander V. Source: 6th International congress on energy fluxes and radiation effects (EFRE 2018), September 16-22, 2018, Tomsk, Russia : abstractsMaterial type: Article; Format:
electronic
available online
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Not fiction
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Specialized;
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121.
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Unipolar barrier structures based on HgCdTe for infrared detection A. V. Voytsekhovskiy, S. N. Nesmelov, S. M. Dzyadukh [et al.] by Voytsekhovskiy, Alexander V | Nesmelov, Sergey N | Dzyadukh, Stanislav M | Gorn, Dmitriy Igorevich | Kashirskii, Danila E | Lozovoy, Kirill A | Dirko, Vladimir V | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Sidorov, Georgiy Yu. Source: Pulsed lasers and laser applications AMPL-2021 : the 15th International conference, September 12-17, 2021, Tomsk, Russia : abstractsMaterial type: Article; Format:
electronic
available online
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Not fiction
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122.
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Long-term stability of electron concentration in HgCdTe-based p-n junctions fabricated with ion etching I. I. Izhnin, K. D. Mynbaev, A. V. Voitsekhovsky [et.al.] by Izhnin, Igor I | Voytsekhovskiy, Alexander V | Korotaev, Alexander G | Varavin, Vasilii S | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Yakushev, Maxim V | Bonchyk, A. Yu | Savytskyy, Hrygory V | Mynbaev, Karim D | Fitsych, Olena I. Source: Infrared physics and technologyMaterial type: Article; Format:
electronic
available online
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123.
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Admittance studies of modification of HgCdTe surface properties with ion implantation and thermal annealing A. G. Korotaev, A. V. Voytsekhovskiy, I. I. Izhnin [et al.] by Voytsekhovskiy, Alexander V | Izhnin, Igor I | Mynbaev, Karim D | Nesmelov, Sergey N | Dzyadukh, Stanislav M | Varavin, Vasilii S | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Yakushev, Maxim V | Korotaev, Alexander G | Sidorov, Georgiy Yu. Source: Surface and coatings technologyMaterial type: Article; Format:
electronic
available online
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124.
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Effect of a boron implantation on the electrical properties of epitaxial HgCdTe with different material composition D. V. Lyapunov, A. A. Pishchagin, D. V. Grigoryev [et.al.] by Lyapunov, D. V | Grigoryev, Denis V | Korotaev, Alexander G | Voytsekhovskiy, Alexander V | Kokhanenko, Andrey P | Iznin, I. I | Savytskyy, Hrygory V | Bonchyk, A. Yu | Dvoretsky, Sergei A | Pishchagin, Anton A | Mikhailov, Nikolay N. Source: Journal of Physics: Conference SeriesMaterial type: Article; Format:
electronic
available online
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125.
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Influence of a high-frequency pulsed nanosecond diffusion discharge in the nitrogen atmosphere on the electrical characteristics of a CdHgTe epitaxial films D. V. Grigoryev, A. V. Voytsekhovskii, A. G. Korotaev [et al.] by Voytsekhovskiy, Alexander V | Korotaev, Alexander G | Lyapunov, D. V | Lozovoy, Kirill A | Tarasenko, Viktor Fedotovich | Shulepov, Mikhail A | Erofeev, Mikhail V | Ripenko, Vasilii S | Dvoretsky, Sergei A | Grigoryev, Denis V | Mikhailov, Nikolay N. Source: Journal of Physics: Conference SeriesMaterial type: Article; Format:
electronic
available online
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126.
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Light emission from CdHgTe–based nanostructures K. D. Mynbaev, A. V. Shilyaev, N. L. Bazhenov [et.al.] by Mynbaev, Karim D | Bazhenov, N. L | Izhnin, A. I | Izhnin, Igor I | Voytsekhovskiy, Alexander V | Mikhailov, Nikolay N | Varavin, Vasilii S | Dvoretsky, Sergei A | Shilyaev, A. V | Томский государственный университет Радиофизический факультет Кафедра квантовой электроники и фотоники | Томский государственный университет Научное управление Лаборатории НУ. Source: Materials physics and mechanicsMaterial type: Article; Format:
electronic
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127.
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Photoluminescence of HgCdTe nanostructures grown by molecular beam epitaxy on GaAs I. I. Izhnin, A. I. Izhnin, K. D. Mynbaev [et.al.] by Izhnin, A. I | Mynbaev, Karim D | Bazhenov, N. L | Shilyaev, A. V | Mikhailov, Nikolay N | Varavin, Vasilii S | Dvoretsky, Sergei A | Fitsych, Olena I | Voytsekhovskiy, Alexander V | Izhnin, Igor I | Томский государственный университет Радиофизический факультет Кафедра квантовой электроники и фотоники. Source: Opto-electronics reviewMaterial type: Article; Format:
electronic
available online
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128.
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Accumulation and annealing of radiation donor defects in arsenic-implanted Hg0.7Cd0.3Te films A. V. Voytsekhovskiy, A. G. Korotaev, I. I. Izhnin [et al.] by Voytsekhovskiy, Alexander V | Korotaev, Alexander G | Izhnin, Igor I | Mynbaev, Karim D | Yakushev, Maxim V | Mikhailov, Nikolay N | Varavin, Vasilii S | Dvoretsky, Sergei A | Marin, Denis V | Fitsych, Olena I | Kurbanov, Kurban R. Source: 2020 7th International Congress on energy fluxes and radiation effects (EFRE 2020), Tomsk, Russia, September 14 – 26, 2020 : proceedingsMaterial type: Article; Format:
electronic
available online
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Not fiction
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129.
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Accumulation of arsenic implantation‑induced donor defects in Hg0.7Cd0.3Te heteroepitaxial structures I. I. Izhnin, K. D. Mynbaev, A. V. Voitsekhovskii [et al.] by Izhnin, Igor I | Mynbaev, Karim D | Voytsekhovskiy, Alexander V | Korotaev, Alexander G | Varavin, Vasilii S | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Yakushev, Maxim V | Fitsych, Olena I | Świątek, Zbigniew | Jakiela, Rafal. Source: Journal of electronic materialsMaterial type: Article; Format:
electronic
available online
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130.
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Background donor concentration in HgCdTe M. Pociask-Bialy, I. I. Izhnin, A. V. Voytsekhovskiy [et.al.] by Pociask-Bialy, Malgorzata | Voytsekhovskiy, Alexander V | Korotaev, Alexander G | Fitsych, Olena I | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Yakushev, Maxim V | Mynbaev, Karim D | Izhnin, Igor I | Томский государственный университет Радиофизический факультет Кафедра квантовой электроники и фотоники | Томский государственный университет Сибирский физико-технический институт Научные подразделения СФТИ | Томский государственный университет Научное управление Лаборатории НУ. Source: Opto-electronics reviewMaterial type: Article; Format:
electronic
available online
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131.
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The relaxation of electrophysical properties HgCdTe epitaxial films affected by plasma of high frequency nanosecond volume discharge in atmospheric-pressure air A. G. Korotaev, D. V. Grigoryev, A. V. Voitsekhovskii [et al.] by Grigoryev, Denis V | Voytsekhovskiy, Alexander V | Lozovoy, Kirill A | Tarasenko, Viktor Fedotovich | Ripenko, Vasilii S | Shulepov, Mikhail A | Erofeev, Mikhail V | Yakushev, Maxim V | Dvoretsky, Sergei A | Korotaev, Alexander G | Mikhailov, Nikolay N | Varavin, Vasilii S. Source: Surface and coatings technologyMaterial type: Article; Format:
electronic
available online
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132.
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Defects in arsenic implanted p+-n- and n+-p-structures based on MBE grown CdHgTe films I. I. Izhnin, O. I. Fitsych, A. V. Voitsekhovskii [et.al.] by Izhnin, Igor I | Voytsekhovskiy, Alexander V | Korotaev, Alexander G | Mynbaev, Karim D | Varavin, Vasilii S | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Yakushev, Maxim V | Bonchyk, A. Yu | Fitsych, Olena I | Savytskyy, Hrygory V | Świątek, Zbigniew. Source: Russian physics journalMaterial type: Article; Format:
electronic
available online
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133.
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Nano‑scale structural studies of defects in arsenic‑implanted n and p‑type HgCdTe films I. I. Izhnin, A. V. Voytsekhovskiy, A. G. Korotaev [et al.] by Izhnin, Igor I | Voytsekhovskiy, Alexander V | Korotaev, Alexander G | Mynbaev, Karim D | Świątek, Zbigniew | Morgiel, Jerzy | Fitsych, Olena I | Varavin, Vasilii S | Marin, Denis V | Yakushev, Maxim V | Bonchyk, A. Yu | Savytskyy, Hrygory V. Source: Applied nanoscienceMaterial type: Article; Format:
electronic
available online
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134.
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Properties of arsenic-implanted Hg1-xCdxTe MBE films I. I. Izhnin, A. V. Voitsekhovskiі, A. G. Korotaev [et.al.] by Izhnin, Igor I | Korotaev, Alexander G | Fitsych, Olena I | Bonchyk, A. Yu | Savytskyy, Hrygory V | Mynbaev, Karim D | Varavin, Vasilii S | Dvoretsky, Sergei A | Yakushev, Maxim V | Voytsekhovskiy, Alexander V | Jakiela, Rafal | Trzyna, Malgorzata. Source: EPJ Web of ConferencesMaterial type: Article; Format:
electronic
available online
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135.
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Optical and electrical studies of arsenic-implanted HgCdTe films grown with molecular beam epitaxy on GaAs and Si substrates I. I. Izhnin, A. V. Voytsekhovsky, A. G. Korotaev [et.al.] by Izhnin, Igor I | Korotaev, Alexander G | Fitsych, Olena I | Bonchyk, A. Yu | Savytskyy, Hrygory V | Mynbaev, Karim D | Varavin, Vasilii S | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Voytsekhovskiy, Alexander V | Yakushev, Maxim V | Jakiela, Rafal. Source: Infrared physics and technologyMaterial type: Article; Format:
electronic
available online
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136.
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Influence of composition of Hg1-xCdxTe(x = 0.22-0.57) epitaxial film on dynamics of accumulation and spatial distribution of electrically active radiation defects after boron implantation A. V. Voytsekhovskiy, D. V. Grigoryev, A. G. Korotaev [et al.] by Grigoryev, Denis V | Korotaev, Alexander G | Kokhanenko, Andrey P | Lozovoy, Kirill A | Izhnin, Igor I | Savytskyy, Hrygory V | Bonchyk, A. Yu | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Voytsekhovskiy, Alexander V | Varavin, Vasilii S | Yakushev, Maxim V. Source: Materials research expressMaterial type: Article; Format:
electronic
available online
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137.
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Electrical profiling of arsenic-implanted HgCdTe films performed with discrete mobility spectrum analysis I. I. Izhnin, I. I. Syvorotka, O. I. Fitsych [et al.] by Syvorotka, I. I | Fitsych, Olena I | Varavin, Vasilii S | Dvoretsky, Sergei A | Marin, Denis V | Mikhailov, Nikolay N | Remesnik, V. G | Yakushev, Maxim V | Mynbaev, Karim D | Izhnin, Igor I | Voytsekhovskiy, Alexander V | Korotaev, Alexander G. Source: Semiconductor science and technologyMaterial type: Article; Format:
electronic
available online
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138.
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Fluence dependence of nanosize defect layers in arsenic implanted HgCdTe epitaxial films studied with TEM/HRTEM I. I. Izhnin, K. D. Mynbaev, Z. Swiatek [et al.] by Izhnin, Igor I | Mynbaev, Karim D | Świątek, Zbigniew | Morgiel, Jerzy | Korotaev, Alexander G | Voytsekhovskiy, Alexander V | Fitsych, Olena I | Varavin, Vasilii S | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Yakushev, Maxim V | Bonchyk, A. Yu | Savytskyy, Hrygory V. Source: International research and practice conference "Nanotechnology and nanomaterials" (NANO-2021), 25-27 August 2021, Lviv, Ukraine : abstract bookMaterial type: Article; Format:
electronic
available online
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139.
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Nano-size defects in arsenic-implanted HgCdTe films: a HRTEM study O. Yu. Bonchyk, H. V. Savytskyy, Z. Świątek [et al.] by Savytskyy, Hrygory V | Świątek, Zbigniew | Morgiel, Jerzy | Izhnin, Igor I | Voytsekhovskiy, Alexander V | Korotaev, Alexander G | Mynbaev, Karim D | Fitsych, Olena I | Varavin, Vasilii S | Bonchyk, A. Yu | Dvoretsky, Sergei A | Marin, Denis V | Yakushev, Maxim V. Source: Applied nanoscienceMaterial type: Article; Format:
electronic
available online
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140.
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Effect of annealing on the structural properties of arsenic-implanted mercury cadmium telluride I. Izhnin, O. I. Fitsych, Z. Świątek [et al.] by Fitsych, Olena I | Świątek, Zbigniew | Morgiel, Jerzy | Bonchyk, A. Yu | Savytskyy, Hrygory V | Mynbaev, Karim D | Voytsekhovskiy, Alexander V | Korotaev, Alexander G | Yakushev, Maxim V | Marin, Denis V | Varavin, Vasilii S | Dvoretsky, Sergei A | Izhnin, Igor I. Source: Opto-electronics reviewMaterial type: Article; Format:
electronic
available online
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141.
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Direct comparison of the results of arsenic ion implantation in n– and p–type Hg0.8Cd0.2Te I. I. Izhnin, K. D. Mynbaev, Z. Swiatek [et al.] by Mynbaev, Karim D | Świątek, Zbigniew | Morgiel, Jerzy | Voytsekhovskiy, Alexander V | Korotaev, Alexander G | Varavin, Vasilii S | Dvoretsky, Sergei A | Marin, Denis V | Yakushev, Maxim V | Izhnin, Igor I | Fitsych, Olena I | Bonchyk, A. Yu | Savytskyy, Hrygory V. Source: Infrared physics and technologyMaterial type: Article; Format:
electronic
available online
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142.
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TEM studies of structural defects in HgTe/HgCdTe quantum wells A. Yu. Bonchyk, H. V. Savytskyy, Z. Swiatek [et al.] by Bonchyk, A. Yu | Savytskyy, Hrygory V | Świątek, Zbigniew | Morgiel, Y | Izhnin, Igor I | Voytsekhovskiy, Alexander V | Korotaev, Alexander G | Mynbaev, Karim D | Fitsych, Olena I | Varavin, Vasilii S | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Yakushev, Maxim V. Source: Applied nanoscienceMaterial type: Article; Format:
electronic
available online
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143.
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Nanosize radiation defects in arsenic implanted HgCdTe epitaxial films of n- and p-type studied with TEM/HRTEM I. I. Izhnin, K. D. Mynbaev, Z. Swiatek [et al.] by Izhnin, Igor I | Mynbaev, Karim D | Świątek, Zbigniew | Morgiel, Jerzy | Korotaev, Alexander G | Voytsekhovskiy, Alexander V | Fitsych, Olena I | Varavin, Vasilii S | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Yakushev, Maxim V | Bonchyk, A. Yu | Savytskyy, Hrygory V. Source: International research and practice conference "Nanotechnology and nanomaterials" (NANO-2020), 26-29 August 2020, Lviv, Ukraine : abstract bookMaterial type: Article; Format:
electronic
available online
; Literary form:
Not fiction
; Audience:
Specialized;
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144.
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Accumulation and annealing of radiation donor defects in arsenic-implanted Hg0.7Cd0.3Te films A. V. Voytsekhovskiy, I. I. Izhnin, K. D. Mynbaev [et al.] by Voytsekhovskiy, Alexander V | Izhnin, Igor I | Mynbaev, Karim D | Morgiel, Jerzy | Świątek, Zbigniew | Korotaev, Alexander G | Fitsych, Olena I | Bonchyk, A. Yu | Savytskyy, Hrygory V | Varavin, Vasilii S | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Yakushev, Maxim V. Source: 7th International congress on energy fluxes and radiation effects (EFRE-2020 online), September 14–25, 2020, Tomsk, Russia : abstractsMaterial type: Article; Format:
electronic
available online
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145.
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Arsenic-ion implantation-induced defects in HgCdTe films studied with Hall-effect measurements and mobility spectrum analysis I. I. Izhnin, K. D. Mynbaev, A. V. Voitsekhovsky [et al.] by Mynbaev, Karim D | Voytsekhovskiy, Alexander V | Korotaev, Alexander G | Syvorotka, I. I | Fitsych, Olena I | Varavin, Vasilii S | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Remesnik, V. G | Yakushev, Maxim V | Świątek, Zbigniew | Morgiel, Jerzy | Bonchyk, A. Yu | Savytskyy, Hrygory V | Izhnin, Igor I. Source: Infrared physics and technologyMaterial type: Article; Format:
electronic
available online
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146.
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Localization and nature of radiation donor defects in the arsenic implanted CdHgTe films grown by MBE I. I. Izhnin, O. I. Fitsych, A. V. Voitsekhovskii [et al.] by Fitsych, Olena I | Voytsekhovskiy, Alexander V | Korotaev, Alexander G | Mynbaev, Karim D | Kurbanov, Kurban R | Varavin, Vasilii S | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Remesnik, V. G | Izhnin, Igor I | Yakushev, Maxim V | Bonchyk, A. Yu | Savytskyy, Hrygory V | Świątek, Zbigniew | Morgiel, Jerzy. Source: Russian physics journalMaterial type: Article; Format:
electronic
available online
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147.
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Hall-effect studies of modification of HgCdTe surface properties with ion implantation and thermal annealing A. G. Korotaev, I. I. Izhnin, K. D. Mynbaev [et al.] by Izhnin, Igor I | Mynbaev, Karim D | Voytsekhovskiy, Alexander V | Nesmelov, Sergey N | Dzyadukh, Stanislav M | Fitsych, Olena I | Varavin, Vasilii S | Dvoretsky, Sergei A | Mikhailov, Nikolay N | Korotaev, Alexander G | Yakushev, Maxim V | Bonchyk, A. Yu | Savytskyy, Hrygory V | Świątek, Zbigniew | Morgiel, Jerzy. Source: Surface and coatings technologyMaterial type: Article; Format:
electronic
available online
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148.
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Nano‑size defect layers in arsenic‑implanted and annealed HgCdTe epitaxial films studied with transmission electron microscopy O. Yu. Bonchyk, H. V. Savytskyy, I. I. Izhnin [et al.] by Izhnin, Igor I | Mynbaev, Karim D | Syvorotka, I. I | Korotaev, Alexander G | Voytsekhovskiy, Alexander V | Fitsych, Olena I | Varavin, Vasilii S | Marin, Denis V | Bonchyk, A. Yu | Mikhailov, Nikolay N | Yakushev, Maxim V | Świątek, Zbigniew | Morgiel, Jerzy | Jakiela, Rafal | Savytskyy, Hrygory V. Source: Applied nanoscienceMaterial type: Article; Format:
electronic
available online
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