Characterization of 4 inch GaAs:Cr wafers D. Budnitsky, V. Novikov, A. Lozinskaya [et.al.]
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ArticleSubject(s): арсенид галлия | детекторы рентгеновского излученияGenre/Form: статьи в журналах Online resources: Click here to access online
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Journal of instrumentation : electronic journal Vol. 12, № 1. P. C01063 (1-7)Abstract: Producing of large area matrix detectors based on semiconductor materials with high atomic number suitable for the registration of the synchrotron radiation of high intensity in the photon energy range 20–90 keV is a relevant technological challenge of our time. This will develop a fundamentally new experimental base of scientific research conducted at leading X-ray synchrotron centers with high luminosity beams. The paper analyzes the possibility of using 4 inch gallium arsenide wafers to create a high-resistive GaAs:Cr detector quality structures on their basis and detector arrays of large area.
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Producing of large area matrix detectors based on semiconductor materials with high atomic number suitable for the registration of the synchrotron radiation of high intensity in the photon energy range 20–90 keV is a relevant technological challenge of our time. This will develop a fundamentally new experimental base of scientific research conducted at leading X-ray synchrotron centers with high luminosity beams. The paper analyzes the possibility of using 4 inch gallium arsenide wafers to create a high-resistive GaAs:Cr detector quality structures on their basis and detector arrays of large area.
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