Interplay between exchange-split Dirac and Rashba-type surface states at the MnBi2Te4/BiTeI interface N. L. Zaitsev, I. P. Rusinov, T. V. Menshchikova, E. V. Chulkov
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ArticleContent type: Текст Media type: электронный Subject(s): обменно-расщепленные состояния | поверхностные состояния | Рашбы эффект | антиферромагнитные топологические изоляторыGenre/Form: статьи в журналах Online resources: Click here to access online
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Physical Review B Vol. 107, № 4. P. 045402-1-045402-9Abstract: Based on ab initio calculations, we study the electronic structure of the BiTeI/MnBi2Te4 heterostructure interface composed of the antiferromagnetic topological insulator MnBi2Te4 and the polar semiconductor trilayer BiTeI. We found a significant difference in the electronic properties of the different contacts between the substrate and overlayer. While the case of a Te-Te interface forms a natural expansion of the substrate, when the Dirac cone state locates mostly in the polar overlayer region and undergoes a slight exchange splitting, the Te-I contact is the source of a four-band state contributed by the substrate Dirac cone and Rashba-type state of the polar trilayer. Owing to magnetic proximity, the pair of Kramers degeneracies for this state is lifted, which produces a Hall response in the transport regime. We believe our findings provide new opportunities to construct novel spintronic devices.
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Based on ab initio calculations, we study the electronic structure of the BiTeI/MnBi2Te4 heterostructure interface composed of the antiferromagnetic topological insulator MnBi2Te4 and the polar semiconductor trilayer BiTeI. We found a significant difference in the electronic properties of the different contacts between the substrate and overlayer. While the case of a Te-Te interface forms a natural expansion of the substrate, when the Dirac cone state locates mostly in the polar overlayer region and undergoes a slight exchange splitting, the Te-I contact is the source of a four-band state contributed by the substrate Dirac cone and Rashba-type state of the polar trilayer. Owing to magnetic proximity, the pair of Kramers degeneracies for this state is lifted, which produces a Hall response in the transport regime. We believe our findings provide new opportunities to construct novel spintronic devices.
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