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Transient processes in the GaAs-based microwave-pin-diodes G. I. Ayzenshtat, A. Y. Yushchenko, V. G. Bozhkov

By: Ayzenshtat, G. IContributor(s): Yushchenko, A. Yu | Bozhkov, V. GMaterial type: ArticleArticleSubject(s): арсенид галлия | диоды | интегральные схемы монолитныеGenre/Form: статьи в журналах Online resources: Click here to access online In: Russian physics journal Vol. 57, № 12. P. 1627-1633Abstract: The results of studies of transient characteristics of microwave-pin-diodes based on gallium arsenide are presented. It is shown that in these diodes, a transient process occurs in two stages resulting in a complicated pulse shape during the diode switching. The dependences of the effective lifetime on the diode radius and forward current value are measured. It is experimentally established that the effective lifetime in the diodes depends on the radius of the active region.
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The results of studies of transient characteristics of microwave-pin-diodes based on gallium arsenide are presented. It is shown that in these diodes, a transient process occurs in two stages resulting in a complicated pulse shape during the diode switching. The dependences of the effective lifetime on the diode radius and forward current value are measured. It is experimentally established that the effective lifetime in the diodes depends on the radius of the active region.

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