Scientific Library of Tomsk State University

   E-catalog        

Normal view MARC view

Topological crystalline insulator in a new bi semiconducting phase F. Munoz, M. G. Vergniory, T. Rauch [et.al.]

Contributor(s): Munoz, F | Rauch, T | Henk, Jurgen | Chulkov, Evgueni V | Mertig, I | Botti, S | Marques, M. A. L | Romero, A. H | Vergniory, M. GMaterial type: ArticleArticleSubject(s): топологические изоляторы | электронные устройстваGenre/Form: статьи в журналах Online resources: Click here to access online In: Scientific Reports [Еlectronic resource] Vol. 6. P. 21790 (1-9)Abstract: Topological crystalline insulators are a type of topological insulators whose topological surface states are protected by a crystal symmetry, thus the surface gap can be tuned by applying strain or an electric field. In this paper we predict by means of ab initio calculations a new phase of Bi which is a topological crystalline insulator characterized by a mirror Chern number nM = −2, but not a strong topological insulator. This system presents an exceptional property: at the (001) surface its Dirac cones are pinned at the surface high-symmetry points. As a consequence they are also protected by time-reversal symmetry and can survive against weak disorder even if in-plane mirror symmetry is broken at the surface. Taking advantage of this dual protection, we present a strategy to tune the band-gap based on a topological phase transition unique to this system. Since the spin-texture of these topological surface states reduces the back-scattering in carrier transport, this effective band-engineering is expected to be suitable for electronic and optoelectronic devices with reduced dissipation.
Tags from this library: No tags from this library for this title. Log in to add tags.
No physical items for this record

Библиогр.: 49 назв.

Topological crystalline insulators are a type of topological insulators whose topological surface states are protected by a crystal symmetry, thus the surface gap can be tuned by applying strain or an electric field. In this paper we predict by means of ab initio calculations a new phase of Bi which is a topological crystalline insulator characterized by a mirror Chern number nM = −2, but not a strong topological insulator. This system presents an exceptional property: at the (001) surface its Dirac cones are pinned at the surface high-symmetry points. As a consequence they are also protected by time-reversal symmetry and can survive against weak disorder even if in-plane mirror symmetry is broken at the surface. Taking advantage of this dual protection, we present a strategy to tune the band-gap based on a topological phase transition unique to this system. Since the spin-texture of these topological surface states reduces the back-scattering in carrier transport, this effective band-engineering is expected to be suitable for electronic and optoelectronic devices with reduced dissipation.

There are no comments on this title.

to post a comment.
Share