Threshold of laser destruction of nonlinear GaSe and GaSe:in crystals when exposed to pulsed radiation at a wavelength of 2.1 microns N. N. Yudin, O. L. Antipov, V. V. Demin [et al.]
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ArticleContent type: Текст Media type: электронный Subject(s): оптический пробой | монокристаллы GaSeGenre/Form: статьи в сборниках Online resources: Click here to access online
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Pulsed lasers and laser applications AMPL-2021 : the 15th International conference, September 12-17, 2021, Tomsk, Russia : abstracts P. 113Abstract: The aim of this work is to determine the optical breakdown threshold of a single crystal GaSe and GaSe:In when exposed to nanosecond radiation of the two micron range and determining the influence of the energy parameters of the testing radiation on the breakdown threshold. The Ho3+:YAG laser was used as the laser radiation source in this work. Pumping was carried out by a Thule fiber laser.
В ст. ошибочно: E. V. Zhuravlev
The aim of this work is to determine the optical breakdown threshold of a single crystal GaSe and GaSe:In when exposed to nanosecond radiation of the two micron range and determining the influence of the energy parameters of the testing radiation on the breakdown threshold. The Ho3+:YAG laser was used as the laser radiation source in this work. Pumping was carried out by a Thule fiber laser.
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