High-strength optical coatings for single-crystal ZnGeP2 by the IBS method using selenide and oxide materials M. M. Zinoviev, N. N. Yudin, V. S. Kuznetsov [et al.]
Material type: ArticleContent type: Текст Media type: электронный Subject(s): высокопрочные оптические покрытия | ионно-лучевое распыление | оксиды | монокристаллы | селенид цинка | дифосфид цинка-германияGenre/Form: статьи в журналах Online resources: Click here to access online In: Ceramics Vol. 6, № 1. P. 514-524Abstract: The paper presents the results on the development of an optical coating for a single-crystal ZnGeP2 substrate based on a selenide-oxide pair of materials (ZnSe/Al2O3). The obtained coating ensures the operation of OPO in the mid-IR range up to 5 μm wavelengths. The possibility of ZnSe sputtering by the IBS method is shown. The obtained optical coating has a high laser-induced damage threshold (LIDT) value at a 2097 µm wavelength: WEo=3.51 J/cm2 in energy density and WPo = 101 W/cm2 in power density at a 10 KHz pulse repetition frequency and a pulse duration of 35 ns. Thus, it is shown for the first time that the pair of materials ZnSe/Al2O3 can be used for the deposition of optical coatings by the IBS method with high LIDT values for ZnGeP2 optical elements operating in the mid-IR range.Библиогр.: 30 назв.
The paper presents the results on the development of an optical coating for a single-crystal ZnGeP2 substrate based on a selenide-oxide pair of materials (ZnSe/Al2O3). The obtained coating ensures the operation of OPO in the mid-IR range up to 5 μm wavelengths. The possibility of ZnSe sputtering by the IBS method is shown. The obtained optical coating has a high laser-induced damage threshold (LIDT) value at a 2097 µm wavelength: WEo=3.51 J/cm2 in energy density and WPo = 101 W/cm2 in power density at a 10 KHz pulse repetition frequency and a pulse duration of 35 ns. Thus, it is shown for the first time that the pair of materials ZnSe/Al2O3 can be used for the deposition of optical coatings by the IBS method with high LIDT values for ZnGeP2 optical elements operating in the mid-IR range.
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