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Influence of infrared radiation on the electrical characteristics of the surface-barrier nanostructures based on MBE HgCdTe M. Pociask-Bialy, I. Izhnin, A. Voitsekhovskii [et.al.]

Contributor(s): Pociask-Bialy, Malgorzata | Voytsekhovskiy, Alexander V | Nesmelov, Sergey N | Dzyadukh, Stanislav M | Izhnin, Igor IMaterial type: ArticleArticleSubject(s): инфракрасное излучение | электрические характеристики | поверхностно-барьерные наноструктуры | градиентные слои | МДП-структуры | квантовые ямы | вольт-частотные характеристикиGenre/Form: статьи в журналах Online resources: Click here to access online In: EPJ Web of Conferences Vol. 133. P. 02001 (1-4)Abstract: Impact of illumination on the admittance of the MIS structures based on MBE Hg1-xCdxTe with graded-gap layers and single quantum wells was investigated. It is shown that for HgCdTe-based nanostructures the illumination greatly affects the capacitance and conductance dependencies. The capacitance-voltage characteristics exhibit a low-frequency behavior, which is associated with a decrease in the differential resistance of the space charge region. Especially informative illumination exposure is in the study of deep traps in n-HgCdTe (x=0.21-0.23) without graded-gap layer. Illumination leads to the low-frequency behavior of capacitance-voltage characteristics of MIS structures based on p-HgCdTe with HgTe single quantum well in the active region, and maximums in the voltage dependences do not appear.
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Impact of illumination on the admittance of the MIS structures based on MBE Hg1-xCdxTe with graded-gap layers and single quantum wells was investigated. It is shown that for HgCdTe-based nanostructures the illumination greatly affects the capacitance and conductance dependencies. The capacitance-voltage characteristics exhibit a low-frequency behavior, which is associated with a decrease in the differential resistance of the space charge region. Especially informative illumination exposure is in the study of deep traps in n-HgCdTe (x=0.21-0.23) without graded-gap layer. Illumination leads to the low-frequency behavior of capacitance-voltage characteristics of MIS structures based on p-HgCdTe with HgTe single quantum well in the active region, and maximums in the voltage dependences do not appear.

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