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	1.	No cover image available Admittance of metal-insulator-semiconductor structures based on graded-gap HgCdTe grown by molecular-beam epitaxy on GaAs substrates A. V. Voytsekhovskiy, S. N. Nesmelov, S. M. Dzyadukh [et.al.] by Voytsekhovskiy, Alexander V \| Dzyadukh, Stanislav M \| Vasilev, Vladimir V \| Varavin, Vasilii S \| Dvoretsky, Sergei A \| Mikhailov, Nikolay N \| Yakushev, Maxim V \| Nesmelov, Sergey N \| Томский государственный университет Радиофизический факультет Кафедра квантовой электроники и фотоники \| Томский государственный университет Сибирский физико-технический институт Научные подразделения СФТИ. Source: Infrared physics and technologyMaterial type: Article; Format: electronic available online Online access: Click here to access online Availability: No items available : Log in to add tags Add to cart (remove)
	2.	No cover image available Admittance of MIS-structures based on HgCdTe with a double-layer CdTe/Al2O3 insulator S. M. Dzyadukh, A. V. Voitsekhovskii, S. N. Nesmelov [et al.] by Voytsekhovskiy, Alexander V \| Nesmelov, Sergey N \| Sidorov, Georgiy Yu \| Varavin, Vasilii S \| Vasilev, Vladimir V \| Dvoretsky, Sergei A \| Mikhailov, Nikolay N \| Yakushev, Maxim V \| Dzyadukh, Stanislav M. Source: Russian physics journalMaterial type: Article; Format: electronic available online Online access: Click here to access online Availability: No items available : Log in to add tags Add to cart (remove)
	3.	No cover image available Impact of the graded-gap layer on the admittance of MIS structures based on MBE-grown n-Hg1-xCdxTe (x = 0.22-0.23) with the Al2O3 insulator A. V. Voytsekhovskiy, S. N. Nesmelov, S. M. Dzyadukh [et.al.] by Voytsekhovskiy, Alexander V \| Dzyadukh, Stanislav M \| Vasilev, Vladimir V \| Varavin, Vasilii S \| Dvoretsky, Sergei A \| Mikhailov, Nikolay N \| Yakushev, Maxim V \| Sidorov, Georgiy Yu \| Nesmelov, Sergey N. Source: Journal of communications technology and electronicsMaterial type: Article; Format: electronic available online Online access: Click here to access online Availability: No items available : Log in to add tags Add to cart (remove)
	4.	No cover image available Admittance of MIS structures based on graded-gap MBE HgCdTe with Al2O3 insulator A. V. Voytsekhovskii, S. N. Nesmelov, S. M. Dzyadukh [et.al.] by Voytsekhovskiy, Alexander V \| Dzyadukh, Stanislav M \| Vasilev, Vladimir V \| Varavin, Vasilii S \| Dvoretsky, Sergei A \| Mikhailov, Nikolay N \| Yakushev, Maxim V \| Sidorov, Georgiy Yu \| Nesmelov, Sergey N. Source: Physica status solidi CMaterial type: Article; Format: electronic available online Online access: Click here to access online Availability: No items available : Log in to add tags Add to cart (remove)