TY  - SER
AU  - Brudnyi,Valentin N.
AU  - Kamenskaya,I.V.
AU  - Brudnyi,P.A.
TI  - Fermi level pinning and hydrostatic pressure effect in electron irradiated GaSb
KW  - уровень зарядовой нейтральности
KW  - радиационные эффекты
KW  - пьезосопротивление
KW  - антимонид галлия
KW  - статьи в журналах
N1  - Библиогр.: 30 назв
N2  - The effect of 2 MeV electron bombardment up to total electron dose of 1×1019cm−2 on the
electrical and piezo resistive properties of n- and p-type GaSb crystals was studied. The electron
 irradiation leads to saturation of the hole concentration at about 5×1018cm−3 as a result of
 Fermi level pinning near the valence band top in all irradiated samples. With this in mind, the
 calculated data on the energy position of the charge neutrality level in GaSb were analyzed. The
 pressure coefficient of resistivity αρ = ∂(lnρ)/∂P was measured as a function of Fermi level
 position in the electron irradiated samples. Isochronal annealing of radiation-induced defects
 was investigated in the temperature range of 20–400 ◦C
UR  - http://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000794659
ER  -