TY  - SER
AU  - Hervieu,Yurij Yurevich
AU  - Timofeev,V.A.
AU  - Nikiforov,Alexander I.
AU  - Esin,M.Yu
TI  - Studying the formation of Si (100) stepped surface in molecular-beam epitaxy
KW  - молекулярно-лучевая эпитаксия
KW  - молекулярные пучки
KW  - кремниевые подложки
KW  - статьи в журналах
N1  - Библиогр.: 14 назв
N2  - Experimental studies of the formation of a stepped surface structure during molecular-beam epitaxy of silicon on a Si (100) substrate have been carried out in wide ranges of variation of the substrate temperature and silicon growth rate. The conditions of the transition from a two-domain structure of the Si (100) surface to a single-domain structure associated with the formation of diatomic steps are determined using reflection high-energy electron diffraction. It is shown that the effect of an increase in the substrate temperature on the transition to a single-domain structure is non-monotonic: a single-domain surface forms in the region of relatively low temperatures, whereas a two-domain surface forms at high temperatures. The transition to a single-domain structure during the experiment is possible only, if the silicon growth rate is increased above a certain minimum value
UR  - http://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000660038
ER  -