TY  - SER
AU  - Shvets,I.A.
AU  - Tugushev,V.V.
AU  - Chulkov,Evgueni V.
AU  - Menshov,V.N.
TI  - Interface induced quantized spin Hall response in three-dimensional topological insulator/normal insulator heterostructures
KW  - топологические изоляторы
KW  - Холла спиновый эффект
KW  - гетероструктуры
KW  - статьи в журналах
N1  - Библиогр.: 24 назв
N2  - We report analytic investigation of the electronic properties of heterostructures comprised by films of three-dimensional topological insulator (TI) and normal insulator (NI) revealing strong interface and size effects on their spin transport characteristics. Imposing at the TI/NI interfaces the natural boundary conditions within a continual scheme, we show that the intrinsic spin Hall response of the NI/TI/NI trilayer can be controlled by tuning the interface potential (IP) together with the TI film thickness. We predict a series of interface induced quantum transitions between topological insulating phase and trivial band insulator phase. We calculate the phase diagram of the NI/TI/NI trilayer and establish an appropriate range of the IP strength and the TI film thickness to realize the regime of quantum spin Hall effect. Our results can provide a useful guide in choosing the relevant material parameters to facilitate the detection of quantum spin Hall conductivity in the TI/NI heterostructures
UR  - http://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000652077
ER  -