02386nab a2200325 c 4500
vtls000622057
RU-ToGU
20210922093800.0
cr |
180301|2016 enk s a eng d
10.1088/1742-6596/741/1/012019
doi
to000622057
RU-ToGU
rus
RU-ToGU
Elongated quantum dots of Ge on Si growth kinetics modeling with respect to the additional energy of edges
K. A. Lozovoy, A. A. Pishchagin, A. P. Kokhanenko, A. V. Voitsekhovskii
Библиогр.: 12 назв.
In this paper refining of mathematical model for calculation of parameters of selforganised quantum dots (QDs) of Ge on Si grown by the method of molecular beam epitaxy (MBE) is done. Calculations of pyramidal and wedge-like clusters formation energy were conducted with respect to contributions of surface energy, additional edge energy, elastic strain relaxation, and decrease in the atoms attraction to substrate. With the help of well-known model based on the generalization of classical nucleation theory it was shown that elongated islands emerge later than pyramidal clusters. Calculations of QDs surface density and size distribution function for wedge-like clusters with different length to width ratio were performed. The absence of special geometry of islands for which surface density and average size of islands reach points of extremum that was predicted earlier by the model not taking into account energy of edges was revealed when considering the additional contribution of edge formation energy.
математическое моделирование
молекулярно-лучевая эпитаксия
квантовые точки
статьи в журналах
745982
Lozovoy, Kirill A.
91708
Kokhanenko, Andrey P.
91707
Voytsekhovskiy, Alexander V.
91706
Pishchagin, Anton A.
318582
Journal of Physics: Conference Series
2016
Vol. 741. P. 012019 (1-4)
1742-6588
RU-ToGU
http://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000622057
статья
432238